A method of forming a semiconductor structure includes, in a radio frequency (RF) deposition chamber, depositing a titanium film using physical vapor deposition and forming a graded hard mask film by reactive sputtering the titanium film with nitrogen in the RF deposition chamber. The graded hard mask film is a titanium nitride film with a graded vertical concentration of nitrogen. The method may further include, during deposition of the titanium film and during formation of the graded hard mask film, modulating one or more parameters of the RF deposition chamber, such as modulating an auto capacitance tuner (ACT) current, modulating the RF power, and modulating the pressure of the RF deposition chamber.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400 C., and thermally annealing the substrate at a temperature above 500 C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO.sub.2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.

A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

A plasma sputtering device including one or a plurality of plasma generating devices each including an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion thereof, a first electromagnet or a permanent magnet group which can apply a static magnetic field, and a high frequency antenna; a second electromagnet which is disposed in a region downstream of the plasma generating device(s) and which can form a curved magnetic force line structure; a target mechanism which includes a permanent magnet embedded therein and a cooling mechanism and which can apply a DC or high frequency voltage; a substrate stage facing the target mechanism; a second permanent magnet group around the substrate stage; and a heat insulating mechanism between a target material and the target mechanism.

There is provided a cathode unit for a sputtering apparatus, having a construction in which a target can be replaced without opening a vacuum chamber to the atmosphere. The cathode unit having targets and being adapted to be mounted on a vacuum chamber has: a supporting frame mounted on an external wall of the vacuum chamber; an annular moveable base supported by the supporting frame in a manner to be movable toward or away from the vacuum chamber; a rotary shaft body rotatably supported by the movable base in a manner to be elongated through an inner space of the movable base in parallel with a sputtering surface of the target; provided an axial direction of the rotary shaft body is defined to be an X-axis direction, and a forward or backward direction orthogonal to the X-axis direction of the movable base is defined to be a Z-axis direction.

A magnetic recording medium includes a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer, a perpendicular magnetic layer, and a protective layer arranged in this order. The perpendicular magnetic layer includes a first magnetic layer and a second magnetic layer from the non-magnetic substrate side in this order. The second magnetic layer contains a magnetic grain and provided farthest from the non-magnetic substrate. The first magnetic layer has a granular structure that contains an oxide in a grain boundary. The second magnetic layer has a granular structure that contains a carbide of an element contained in the magnetic grain in a grain boundary.