An evaporation source for deposition of evaporated material on a substrate is described. The evaporation source including a crucible for material evaporation; a distribution assembly with one or more outlets for providing the evaporated material to the substrate, the distribution assembly being in fluid communication with the crucible; and a measurement assembly. The measurement assembly includes a tube connecting an interior space of the distribution assembly with a pressure sensor.

The present invention discloses an evaporation source heating system including a vacuum heating container, a first heating source disposed around an outer peripheral surface of the heating container and a soaking layer disposed in the heating container, and the soaking layer is disposed opposite to an inner wall of the heating container so as to uniformly transmit heat emitted from the inner wall of the heating container. The present invention provides the soaking layer in the heating container of the evaporation source heating system, on one hand, a risk of material crack caused due to exorbitant local temperature is avoided, and on the other hand, heating uniformity is also improved. In addition, by heating the soaking layer in the heating container, time needed for realizing uniform heating is sharply shortened, and a heating state of the system is also real-time controlled more conveniently.

Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Provided is an apparatus and a method that is capable of performing continuous coating at a constant coating composition and rate. One embodiment is a deposition apparatus for coating two or more compounds or elements on a substrate, the apparatus comprising: a supply unit for supplying the two or more compounds or elements to a plurality of solid bodies; a heating unit for melting and evaporating the solid bodies supplied from the supply unit to form vapor; a buffer unit, connected to the heating unit, in which the vapor stays and is mixed with previously generated vapor; and a nozzle connected to the buffer unit and having an opening toward the substrate.

A heating device for evaporation, an evaporation device and an evaporation method are provided. The heating device includes: a crucible for holding an evaporation raw material; a movable heating unit which is disposed outside the crucible and can move in the direction perpendicular to a bottom surface of the crucible; and a controller configured to control the height from the movable heating unit to the bottom surface of the crucible.

A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

A cabinet for a solid material container comprises a main body having a top wall, a side wall, and a bottom wall; an entry/exit portion which is attached to a portion of the main body, for putting in and taking out the solid material container; an exhaust duct attached to a portion of the main body; a heating portion for heating the solid material container; a temperature measuring portion for measuring a temperature of the solid material container, or of the heating portion; and a cooling blower for blowing cooling air toward the solid material container.

Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.