The present disclosure relates to the field of display technology, particularly to a vacuum deposition apparatus and a vapor deposition method. The vacuum deposition apparatus includes a vacuum chamber and a rotary base, an evaporation source, and a plurality of vapor deposition zones arranged in series from bottom to top in the vacuum chamber, wherein the shape of the rotary base is a Reuleaux triangle, and the trajectories of movement of its vertices in the horizontal plane is a rounded square, the vapor deposition zones are arranged at intervals along the trajectories of movement of the vertices of the rotary base, the evaporation source is driven by the rotary base to pass below the vapor deposition zones sequentially, so that the evaporation source can be used to perform the vapor deposition operation in multiple directions simultaneously, thus improving the uniformity of film formation and utilization of the evaporation material.

An evaporation apparatus includes a holder, a source, a first sensor, a calculating unit, and an actuator. The holder is configured to hold a substrate. The source is configured to evaporate an evaporation material to be deposited on the substrate. The first sensor is configured to detect evaporation rates of the evaporation material at plural detection positions. The calculating unit is configured to estimate an evaporation angle based on the detected evaporation rates of the evaporation material at the detection positions. The actuator is configured to move the source based on the estimated evaporation angle.

The present disclosure relates to the field of display technology, particularly to a vacuum deposition apparatus and a vapor deposition method. The vacuum deposition apparatus includes a vacuum chamber and a rotary base, an evaporation source, and a plurality of vapor deposition zones arranged in series from bottom to top in the vacuum chamber, wherein the shape of the rotary base is a Reuleaux triangle, and the trajectories of movement of its vertices in the horizontal plane is a rounded square, the vapor deposition zones are arranged at intervals along the trajectories of movement of the vertices of the rotary base, the evaporation source is driven by the rotary base to pass below the vapor deposition zones sequentially, so that the evaporation source can be used to perform the vapor deposition operation in multiple directions simultaneously, thus improving the uniformity of film formation and utilization of the evaporation material.

A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

An apparatus for measuring a deposition rate includes a light source unit in a deposition region between a deposition source and a substrate in a vacuum chamber, the light source unit emits a monochromatic light toward a deposition material released from the deposition source, a photosensor unit that measures at least one of light absorption, scattering, and emission in the deposition region when light emitted from the light source unit passes through the deposition region, and a multi-pass forming unit defining a multi-pass path between the light source unit and the photosensor unit.

An evaporation apparatus includes a holder, a source, a first sensor, a calculating unit, and an actuator. The holder is configured to hold a substrate. The source is configured to evaporate an evaporation material to be deposited on the substrate. The first sensor is configured to detect evaporation rates of the evaporation material at plural detection positions. The calculating unit is configured to estimate an evaporation angle based on the detected evaporation rates of the evaporation material at the detection positions. The actuator is configured to move the source based on the estimated evaporation angle.

One or more embodiments of the present invention relate to a sputtering device and a sputtering method. By using the sputtering device according to the present embodiment, characteristics of a deposition layer formed at the organic light emitting display apparatus may be improved, thereby improving electric characteristics and image quality of the organic light emitting display apparatus may be improved.

A gas manifold for delivery gas to a sputtering chamber is provided with ports to accommodate plasma emission monitors to monitor plasma information in the sputtering chamber to provide feedback control. The collimators of the plasma emission monitors is exposed to gas flow and thus coating of the monitor is greatly reduced.