A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

A method of depositing of a film on a substrate with controlled adhesion. The method comprises depositing the film including metal, wherein the metal is deposited on the substrate using physical vapor deposition at a pressure that achieves a pre-determined adhesion of the film to the substrate. The pre-determined adhesion allows processing of the film into a device while the film is adhered to the substrate but also allows removal of the device from the substrate.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg.sub.(x)Zn.sub.(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg.sub.(x)Zn.sub.(1-x)O.

A processing system for processing a flexible substrate is described. The processing system includes a vacuum chamber having a wall with an opening for the flexible substrate, a substrate support for supporting the flexible substrate during transportation of the flexible substrate through the opening, and a measurement assembly for measuring at least one of a property of the flexible substrate and a property of one or more coatings on the flexible substrate. The measurement assembly and the substrate support are attached to the wall.

A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX.sub.2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.

A film manufacturing apparatus includes a lamination unit that laminates a first layer at one side in a thickness direction of a long-length substrate film to produce a one-sided laminated film, and that laminates a second layer at the other side in the thickness direction of the one-sided laminated film to produce a double-sided laminated film; a conveyance unit; a marking unit; a measurement unit; a detection unit, disposed at an upstream side in the conveyance direction of the measurement unit; and an arithmetic unit that obtains physical properties of the first layer and the second layer based on the physical property at a first position in the one-sided laminated film and the physical property at a second position in the double-sided laminated film. The arithmetic unit defines, with a mark as a reference, a position substantially the same as the first position to be the second position.

A method of depositing of a film on a substrate with controlled adhesion. The method comprises depositing the film including metal, wherein the metal is deposited on the substrate using physical vapor deposition at a pressure that achieves a pre-determined adhesion of the film to the substrate. The pre-determined adhesion allows processing of the film into a device while the film is adhered to the substrate but also allows removal of the device from the substrate.

The average thickness t.sub.T of a magnetic recording medium meets the requirement that t.sub.T≤5.5 [μm], and the dimensional change amount Δw in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/N≤Δw.