A solid state electrochemical battery fabrication device and a method of creating the solid state electrochemical battery are provided. There is a first chamber comprising a first magnetron and a second chamber comprising a second magnetron, coupled to the first chamber. There is a third chamber comprising a vapor source for a polymer deposition, coupled to the second chamber. A Knudsen cell is coupled to the third chamber and configured to deposit lithium on a battery being fabricated. A linear hollow shaft connects the first, second, and third chambers, and provides a hermetic seal. A first telescopic arm having a housing is coupled to a first end of the hollow shaft and configured to extend out of its housing from the first chamber to the second chamber.

A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.

The average thickness t.sub.T of a magnetic recording medium meets the requirement that t.sub.T5.5 [m], and the dimensional change amount w in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/Nw.

A resistance measurement device for measuring sheet resistance of an electrically conductive film being long in one direction includes two probes disposed to face each other in spaced apart relation so as to allow the electrically conductive film to be interposed therebetween without contacting with the electrically conductive film; a scanning unit that allows the two probes to scan in a cross direction crossing the one direction; and an arithmetic unit that calculates a sheet resistance of the electrically conductive film based on a voltage measured by the two probes. The arithmetic unit includes a memory that memorizes a reference voltage measured by allowing the two probes to scan in the cross direction without interposing the electrically conductive film between the probes. The arithmetic unit corrects an actual voltage by allowing the two probes to scan in the cross direction with the electrically conductive film being interposed between the probes.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

The average thickness t.sub.T of a magnetic recording medium meets the requirement that t.sub.T5.5 [m], and the dimensional change amount w in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/Nw.

A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (R.sub.a) of 11 angstroms or less.

An ion depth profile control method includes performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile, obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning, and generating a process recipe regarding the at least one process condition.

A method for measuring a contact resistance at an interface of an electrically conductive coating and a cross-ply surface of a composite layer having electrically conductive fibers. The method includes: placing a dielectric coating of a sensing pad in contact with the composite layer or with the electrically conductive coating on the cross-ply surface of the composite layer; electrically connecting first and second input terminals of a comparator to the sensing pad and to one side of a capacitor respectively; electrically connecting another side of the capacitor to a fixed resistance; electrically connecting the fixed resistance to an electrically conductive body inserted in a hole in the composite layer; supplying an alternating current to the electrically conductive body and to the fixed resistance; and outputting a characteristic voltage signal if an amplitude of the input signal at the first input terminal is at least equal to an amplitude of the input signal at the second input terminal.

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.