The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

At least one layer in a coating located on a surface of a substrate is a domain structure layer constituted of two or more domains different in composition. The average value of the size of each of first domains, defined as the diameter of a virtual circumcircle in contact with each first domain, is 1 nm to 10 nm. The average value of the nearest neighbor distance of each first domain, defined as the length of the shortest straight line connecting the center of the circumcircle with the center of another circumcircle adjacent to the circumcircle, is 1 nm to 12 nm. 95% or more of the first domains has a size within 25% of the average value of the size, and 95% or more of the first domains has a nearest neighbor distance within 25% of the average value of the nearest neighbor distance.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

Embodiments relate to a sputter chamber with a configurable surface in communication with a target material. A control system is in communication with the chamber and functions to prepare an alloy film by changing a composition of the configurable surface. As ingress gas is introduced to the chamber to interact with the changed composition, the interaction causes a reaction that produces an alloy film.

A deposition apparatus uniformly controlling deposited quantities of a plurality of depositing sources by efficiently determining an abnormal depositing source. The deposition apparatus may reduce loss of materials by exactly determining an abnormal depositing source. The deposition apparatus includes: a plurality of depositing sources spraying a deposition material; a substrate holder fixing a substrate to face the depositing source; a depositing source shutter disposed at one side of the depositing source and opening and closing an passage of each depositing source; and a main shutter disposed between the depositing source and the substrate fixed to the substrate holder and depositing a part of the deposition material on the substrate through the main shutter.

Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

The invention relates to a diaphragm assembly of an aperture diaphragm for delimiting the coating region which is operative in the deposition of a layer and to a sputtering device which uses the diaphragm assembly. The diaphragm assembly comprises a main part (13) which has a passage (14) delimited by a passage edge. The aim of the invention is to design the diaphragm opening to be temporally and geometrically variable in situ. This is achieved in that the diaphragm assembly has at least one diaphragm plate (17, 17, 17) which is assembled on the main part (13) so as to be movable in front of the passage (14) and back. The diaphragm assembly additionally comprises a movement device which is operatively connected to the diaphragm plate (17, 17, 17) in order to carry out the movement thereof.

Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.

A surface treatment apparatus includes a mounting device, a housing unit, a surface treatment device, a conveyance device, and a first adjustment device. A workpiece is mounted on the mounting device. The housing unit houses the workpiece mounted on the mounting device. The surface treatment device performs at least one kind of surface treatment on the workpiece housed in the housing unit. The conveyance device conveys the workpiece mounted on the mounting device along the surface treatment device. The first adjustment device adjusts an orientation of the workpiece according to a conveyance position by the conveyance device and a position of the surface treatment device.

Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.