The average thickness t.sub.T of a magnetic recording medium meets the requirement that t.sub.T 5.5 [m], and the dimensional change amount w in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/Nw.

A design of an integrated computational element (ICE) includes (1) specification of a substrate and multiple layers, their respective target thicknesses and refractive indices, refractive indices of adjacent layers being different from each other, and a notional ICE fabricated based on the ICE design being related to a characteristic of a sample, and (2) identification of one or more critical layers of the ICE layers, an ICE layer being identified as a critical layer if potential variations of its thickness or refractive index due to expected fabrication variations cause ICE performance degradation that exceeds a threshold degradation, otherwise the ICE layer being identified as a non-critical layer. At least one critical layer of the ICE is formed using two or more forming steps to form respective two or more sub-layers of the critical layer, and at least one non-critical layer of the ICE is formed using a single forming step.

A method for measuring a contact resistance at an interface of an electrically conductive coating and a cross-ply surface of a composite layer having electrically conductive fibers. The method includes: placing a dielectric coating of a sensing pad in contact with the composite layer or with the electrically conductive coating on the cross-ply surface of the composite layer; electrically connecting first and second input terminals of a comparator to the sensing pad and to one side of a capacitor respectively; electrically connecting another side of the capacitor to a fixed resistance; electrically connecting the fixed resistance to an electrically conductive body inserted in a hole in the composite layer; supplying an alternating current to the electrically conductive body and to the fixed resistance; and outputting a characteristic voltage signal if an amplitude of the input signal at the first input terminal is at least equal to an amplitude of the input signal at the second input terminal.

A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (R.sub.a) of 11 angstroms or less.

A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.

Embodiments of the present invention disclose a detection device for detecting a thickness of a vacuum-evaporated film and a vacuum evaporation apparatus, thereby solving, for example, a problem that a conventional detection device results in excessively high production cost due to frequent replacement of a crystal plate. The detection device includes: a crystal plate, a detection structure provided with an opening corresponding to the crystal plate such that evaporated molecules or atoms are deposited on the crystal plate through the opening; and a filter disposed between the opening and the crystal plate.

A method for depositing a layer (2) of a coating which is reflective or anti-reflective to DUV radiation onto a surface (3a) of a substrate (3) for a DUV optical element includes: transferring a coating material (M) into the gas phase in a coating source (4), moving the substrate relative to the coating source along a predetermined movement path (5), and varying a coating rate (RB) and/or a rotation speed (?(t)) of a spin axis (7) of the substrate during the movement along the movement path. A covering element (6) is arranged between the coating source (4) and the surface and covers the surface at least partially during the movement of the substrate. Also disclosed is an optical element for the DUV wavelength range, with a substrate and a reflective or anti-reflective coating (B) applied to the substrate, having at least one layer deposited by the disclosed method.

Provided is a manufacturing method of an interior member of a plasma processing apparatus, which improves processing yield. The interior member is disposed inside a processing chamber of the plasma processing apparatus and includes, on a surface thereof, a film of a material having resistance to plasma. The manufacturing method includes: a step of moving a gun by a predetermined distance along the surface of the interior member to spray the material to form the film, and disposing a test piece having a surface having a shape simulating a surface shape of the interior member within a range of the distance within which the gun is moved and forming the film of the material on the surface of the test piece; and a step of adjusting, based on a result of detecting a crystal size of the film on the surface of the test piece and presence or absence of a residual stress or inclusion of a contaminant element, a condition of forming the film on the surface of the interior member by the gun.

In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg.sub.(x)Zn.sub.(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg.sub.(x)Zn.sub.(1-x)O.