To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

A substrate film forming machine table and a usage method. The substrate film forming machine table comprises: a first substrate bearing inlet and outlet chamber; a second substrate bearing inlet and outlet chamber; a film forming chamber; an intermediate chamber; a pump set connected to the first substrate bearing inlet and outlet chamber; a second pump connected to the intermediate chamber; a third pump connected to the film forming chamber and the second substrate bearing inlet and outlet chamber; at least one backup pump, which is provided to connect to the film forming chamber and the second substrate bearing inlet and outlet chamber so as to extract air from the film forming chamber and the second substrate bearing inlet and outlet chamber when the third pump is damaged; or, connecting to the intermediate chamber so as to extract air from the intermediate chamber when the second pump is damaged.

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to a system and method of forming an optical device film. In an embodiment, a method is provided for positioning a substrate in a pre-cleaning chamber disposed in a cluster processing system and pre-cleaning the substrate to remove a native oxide layer from one or more surfaces of the substrate. The substrate is then transferred in an air free state to a deposition chamber disposed in the cluster processing system for forming an optical device film layer on the substrate.

Apparatus and methods for flipping substrates in vacuum between PVD sputtering of each side for increasing throughput are provided herein. In some embodiments disclosed herein, a module of a processing system for flipping a substrate in vacuum is provided. The module includes a clamp assembly for securing the substrate, a first motor assembly coupled to the clamp assembly for rotating the clamp assembly, and a second motor assembly coupled to the first motor assembly for raising and lowering the first motor assembly and the clamp assembly.

Coating processes for vacuum chamber arrangements and apparatus thereof are herein disclosed. In some aspects, a coating process may include coating at least one workpiece using a vacuum chamber arrangement. The vacuum chamber arrangement may include a vacuum chamber, a substrate holding arrangement, an additional substrate holding arrangement, one or more bearings, a supply hose and an additional supply hose. The vacuum chamber may include a lock chamber, an additional lock chamber, a heating chamber, an additional heating chamber, and a coating chamber. The one or more bearings may support the substrate holding arrangement in such a way that it can be moved between the lock chamber and the coating chamber. The one or more bearings may also support the additional substrate holding arrangement in such a way that it can be moved between the additional lock chamber and the coating chamber.

Porous diffuser assemblies including multiple diffuser elements. The porous diffuser assemblies include a diffuser body, a diffuser base coupled to the diffuser body and forming a plenum there between, the diffuser base including a plurality of openings formed therein, and a porous diffuser element disposed in each of the plurality of openings wherein surfaces of the porous diffuser elements are exposed to the plenum. Gas purged chambers and methods of purging a chamber are disclosed, as are numerous other aspects.

A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.