A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.

The present disclosure provides a substrate processing apparatus including at least one input/output chamber. The load lock device includes a base, a guide rail, a platform and an optical measuring module. The guide rail is connected to the base. The platform, carrying a cassette for holding a batch of spaced substrates, is movably disposed on the guide rail. The optical measuring module is configured to acquire an actual moving distance traveled by the platform along the guide rail based on at least one optical signal reflected from the platform.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A device for sealing a vacuum chamber is described, the vacuum chamber providing a first volume. The device includes an intermediate volume providing a fluid communication between the first volume and a second volume, a first seal for sealing a first conduit associated with the first volume and sealing the first volume from the intermediate volume, a second seal for sealing a second conduit associated with the second volume and sealing the second volume from the intermediate volume, and a third conduit providing a first fluid path to the intermediate volume.

Semiconductor processing apparatuses and methods are provided in which a pre-clean chamber receives a semiconductor wafer from a metal gate layer deposition chamber and at least partially removes an oxide layer on a metal gate layer. In some embodiments, a semiconductor processing apparatus includes a plurality of metal gate layer deposition chambers. Each of the metal gate layer deposition chambers is configured to form a metal gate layer on a semiconductor wafer. At least one pre-clean chamber of the apparatus is configured to receive the semiconductor wafer from one of the metal gate layer deposition chamber and at least partially remove an oxide layer on the metal gate layer.

A method and apparatus for processing substrates is described herein. In one embodiment, a transfer apparatus is described that includes a blade, a plurality of support arms coupled to the blade, a plurality of grippers coupled to each of the support arms, and a grip actuator operably coupled to the support arms or one or more of the plurality of grippers.

A continuous machine (100) for coating substrates (103) comprises a process module (130) and a vacuum lock (110, 150) for introducing the substrates (103) or removing the substrates (103). The vacuum lock (110, 150) comprises a chamber for receiving a substrate carrier (102) with a plurality of substrates (103) and a flow channel arrangement for evacuating and venting the chamber. The flow channel arrangement comprises a first channel for evacuating and venting the chamber and a second channel for evacuating and venting the chamber, wherein the first channel and the second channel are arranged at opposing sides of the chamber.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

A group of inventions is related to process equipment to process surfaces in mass production, particularly, vacuum process equipment to apply thin film coatings with set optical, electrical and other parameters. The technical result is to ensure a capability of processing flexible large substrates, as well as small substrates with a high degree of coating uniformity, with an ability to utilize a wide range of technologies and process devices, as well as to have a highly effective useful operation of applied materials. The proposed technical result is obtained by a method of applying thin film coatings on substrates, which are placed on rotating drums, which consequently move along the processing zones with the same constant linear and angular speeds. Furthermore, a ratio between the linear and angular speeds of the drum is selected so that each surface point of the drum will complete at least two full revolutions while passing through the processing zone. Also, the proposed technical result is also achieved by the fact that within the manufacturing line for applying the thin film coatings, consisting of the inlet airlock chamber, process chamber with at least one process device within it, which forms a processing zone, outlet buffer chamber, transportation system and substrate holder, designed to move along chambers, a substrate holder designed as a carriage with a cylinder installed on it, positioned coaxially toward the movement direction of the carriage and designed to rotate, while the angular rotational velocity and linear speed of the movement, during the processing, will be constant and selected so that each surface point of the cylinder will complete at least two full revolutions while passing through the processing zone. Furthermore, the transportation system will be equipped with rollers, and carriage with guides that interact with rollers.

A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.