A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.

A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A vacuum atmosphere exchange device used in a vacuum sputtering apparatus is provided. The vacuum atmosphere exchange device has a substrate transferring track. The vacuum atmosphere exchange device has a cooling device disposed along a transferring path of the substrate transferring track to rapidly cool down a film formation substrate on the substrate transferring track. A vacuum sputtering apparatus is also provided. By using the vacuum sputtering apparatus and the vacuum atmosphere exchange device thereof, the substrate after the deposition process can be rapidly cooled down such that the problem of film quality caused by high temperature and temperature non-uniformity can be resolved.

A vacuum process apparatus includes a process chamber, a load lock, a carrier, a process device, and an evacuating device. The process chamber has an opening. The load lock is disposed on the process chamber. The carrier includes a first carrying surface and a second carrying surface opposite to the first carrying surface. The carrier is reversibly disposed on the opening to seal the process chamber and to position the first carrying surface and the second carrying surface in the process chamber and load lock respectively. The first carrying surface and the second carrying surface are configured to carry a first object and a second object to be treated. The process device is disposed within the process chamber and is configured to provide chemical reactants. The evacuating device is configured to perform an evacuating operation on the load lock while a vacuum process is performed within the process chamber.

A device for coating sheet-type substrates, in particular glass panes, in a vacuum coating system is described. The system includes a) a series connection of chambers, through which each substrate sheet passes and which are arranged on the entry side, namely a load lock chamber, a buffer chamber and a transfer chamber, each of which is vacuum-sealable by a check valve. An area of process chambers follows the transfer chamber and the process chamber is followed by a transfer chamber, buffer chamber and load lock chamber. The system also includes b) a conveyor device; c) a vacuum pump with an adapter flange in the region of the buffer chamber; d) at least two flow baffles in the buffer chamber; e) a system for the longitudinal and height displacement of the flow baffles; and f) an assembly for controlling the dynamic processes.

The disclosed invention comprises a vacuum system cluster tool (0), comprising a dual chamber setup with at least one chemical vapour deposition chamber (1) and at least one physical vapour deposition chamber (3), with corresponding chemical vapour deposition means (10, 11, 12, 13) and corresponding physical vapour deposition means (30, 31, 32, 33) attached, as compact inexpensive, simply constructed vacuum system cluster tool (1) without mechanical sample transfer is created. Such a system cluster tool (0) is reached such that the at least one chemical vapour deposition chamber (1) and the at least one physical vapour deposition chamber (3) are divided by a gate valve (2) but directly connected on two opposite sides to the gate valve (2), whereby a CVD or ALD preparation step with closed gate valve (2) onto the surface (400) and a subsequent PVD deposition after opening the gate valve (2) can be performed, while the physical vapour deposition is carried out through the physical vapour deposition chamber (3) and completely through the opening of the gate valve (2) onto the surface (400) of the substrate (40), which can also be repeated in several cycles and whereby a substrate (40) transfer out of the chemical vapour deposition chamber (1) or a linear substrate (40) movement is not necessary.