A self-supporting ultra-fine nanocrystalline diamond thick film, the thickness being 100-3000 microns, wherein 1 nanometer≤diamond grain size≤20 nanometers. A method for using chemical vapor deposition to grow ultra-fine nanocrystalline diamond on a silicon substrate, and separating the silicon substrate and the diamond to acquire the self-supporting ultra-fine nanocrystalline diamond thick film. The chemical vapor deposition method is simple and effective, and prepares a high-quality ultra-fine nanocrystalline diamond thick film.

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond (10) is provided with single crystal diamond layers (2, 3). One single crystal diamond layer (2) is formed on a diamond substrate (1) and contains point defects. The other single crystal diamond layer (3) is grown on the single crystal diamond layer (2). The single crystal diamond layers (2, 3) have a lower dislocation density than the diamond substrate.

The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.

The diamond-coated tool includes a base material and a diamond layer disposed on the base material, wherein the skewness Ssk defined in ISO25178 of the diamond layer is more than 0.

A process for manufacturing a porous diamond having a tridimensional (3D) structure. The process comprises the steps of using a substrate with a pre-defined shape and a plurality of pores of a defined porosity shape and size, heating a reactant hydrocarbon gas and reactant hydrogen in a filament to form a product gas, depositing an activated carbon atom from the product gas onto the substrate, wherein the activated carbon atom reacts with the substrate to form a diamond structure on the substrate, and completely removing the substrate to obtain the 3D pure porous diamond structure, wherein the 3D pure porous diamond structure is formed entirely of diamond and is identical in shape and porosity shape and size of the plurality of pores as that of the substrate. The 3D pure porous diamond structure formed is of a controlled thickness and porosity, and devoid of the substrate.

Provided is a hot filament CVD device capable of easily disposing multiple base materials in a chamber. A hot filament CVD device includes a chamber, multiple filaments, multiple base material supports supporting respective multiple base materials, and a table. The multiple base material supports can be inserted into the chamber in a predetermined insertion direction through an opening, and support the corresponding multiple base materials so that the multiple base materials are disposed at intervals in the insertion direction. The table has a mounting surface on which the multiple base material supports are allowed to be mounted allowing the multiple base materials to be disposed facing the corresponding multiple filaments, and supports the multiple base material supports inside the chamber while allowing the multiple base material supports to be disposed adjacent to each other in a chamber width direction.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

An electrode for an ozone generator or chlorine generator includes an electrically conductive substrate, a doped-Si layer disposed over the conductive substrate, and a boron-doped diamond (BDD) layer disposed over the doped-silicon layer. The doped-silicon layer defines a discrete architecture that maintains adhesion throughout a high temperature CVD boron-doped diamond process. Another electrode having a PVD nitrogen-doped diamond (ta-C:N) layer disposed over a conductive substrate is also provided.

A method for coating temperature-sensitive substrates with polycrystalline diamond by a hot-wire CVD method, in which hydrogen and at least one carbon carrier gas are fed into a coating chamber. The fed gases are split at an electrically heated wire in such a way that carbon is formed and deposits on the temperature-sensitive substrate in the form of the diamond modification thereof. The substrate is arranged in the coating chamber, which is at a reduced pressure, and electrical power to electrically heat the wire is adjustable. The method is performed cyclically in respect of the electrical power that is fed to electrically heat the wire. A basic power is fed as lower threshold value for a predetermined time (basic load phase) and is increased for a further predetermined time to a maximum power as an upper threshold value (pulse phase) and is then reduced again to the basic power.