Synthesis methods for performed by chemical vapor deposition are improved, particularly for diamond synthesis. The time required for depositing diamond layers is reduced by compressing the plasma near the deposition substrate to increase the chances of collision between active species.

Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

The invention relates to the improvement of synthesis by chemical vapour deposition, particularly diamond synthesis. It is proposed to reduce the time required for the deposition of diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.

This film forming device includes: a vacuum container in which a substrate is disposed; an antenna that generates inductively coupled plasma in the vacuum container and that includes a conductor element and a capacitor element that are electrically connected to each other in series; a high-frequency power supply that supplies high-frequency current to the antenna; and a gas supply mechanism that supplies raw material gas containing C, H, and O into the vacuum container. A carbon-based thin film is formed on the substrate in the vacuum container by a plasma CVD method using the inductively coupled plasma generated in the vacuum container by applying the high-frequency current to the antenna.

Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

A substrate for a high-frequency device including a support substrate having unevenness on a surface thereof, a diamond layer on the surface of the support substrate, and a silicon oxide film layer on the diamond layer. Thereby, the substrate for a high-frequency device using diamond having excellent high-frequency characteristics and a method for producing a substrate for a high-frequency device using diamond having excellent high-frequency characteristics are provided.

Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about 10 C. to about 20 C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp.sup.3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

An apparatus for forming a carbon-containing film on a substrate includes: a stage (lower electrode) provided inside a process container with the substrate placed thereon; and a gas shower head (upper electrode) positioned to face the stage inside the process container and provided to supply a film formation gas for the carbon-containing film into the process container while being connected to a radio-frequency power supply configured to supply radio-frequency power in a VHF or UHF band, wherein a distance between the stage and the gas shower head is set to a distance in a range of 1 time or more and 4 times or less of a skin depth of plasma of the film formation gas, which is formed by supplying the film formation gas from the gas shower head into the process container and supplying the radio-frequency power from the radio-frequency power supply to the upper electrode.

In some embodiments, a method of forming a dielectric film includes exposing a substrate in a processing chamber to a silicon precursor having general Formula (I) to form a silicon-containing film on the substrate. Formula (I) can be represented by:

##STR00001##

wherein Q.sup.1 is a carbon atom or an oxygen atom, and each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 is independently selected from a hydrogen atom, a substituted alkyl, an unsubstituted alkyl, a substituted alkoxy, an unsubstituted alkoxy, a substituted vinyl, an unsubstituted vinyl, a silane, a substituted amine, an unsubstituted amine, or a halide. The method further includes purging the processing chamber of the silicon precursor.