A method of growing a single crystal diamond material synthesized using a homoepitaxial chemical vapor deposition process. The method includes the steps of placing a free-standing diamond starting seed substrate on a substrate holder within a reaction chamber for chemical vapor deposition; feeding a process gas into the reaction chamber, the process gas including hydrogen gas; igniting a plasma within the reaction chamber to activate the process gas by adjusting the substrate temperature to increase to a first target substrate temperature; adding a carbon-containing gas to the process gas once the substrate temperature is at or near the first target substrate temperature to initiate diamond growth; and adjusting the substrate temperature to a second target substrate temperature that is different from the first target substrate temperature during the diamond growth.

Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

There are provided a food container having a silicon incorporated diamond like carbon (Si-DLC) layer and a method thereof. The food container includes a container made of a plastic material; an intermediate thin layer formed on a surface of the container; and a Si-DLC layer formed on the intermediate thin layer. Accordingly, it is possible to provide porous plastic container having a Si-DLC layer and a manufacturing method thereof, which can implement high oxygen barrier properties and excellent mechanical characteristics by stably depositing a Si-DLC layer on a food container having lower surface energy without breaking the Si-DLC layer.

A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 m wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm.sup.1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm.sup.1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.

The invention relates to a device (1) and a process for applying a doped diamond layer to a substrate (2, 2a) by chemical vapour deposition. The device (1) has a deposition chamber for holding the substrate (2, 2a), a gas activation element (7) in the form of a hollow body with a flow channel (7b) for a process gas, in particular hydrogen, an outlet opening (16) leading from the flow channel (7b) into the deposition chamber (3), a heating device (8) for heating a wall (7a) of the gas activation element (7) surrounding the flow channel (7b) and a solid precursor, other than carbon, within the flow channel (7b).

The present disclosure provides a method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped with a metal dopant to form a doped diamond-like carbon film. The metal dopant is thermally annealed to the doped diamond-like carbon film.

The present invention relates to a method for coating a substrate, preferably a drill, wherein at least one first HiPIMS layer is applied by means of a HiPIMS process. Preferably, at least one second layer is applied to the first HiPIMS layer by means of a coating process that does not contain a HiPIMS process.

Embodiments of the present disclosure provide a film and a forming method thereof. The forming method includes: providing a base; forming a diamond-like carbon film on the base, where the DLC film has carbon-hydrogen chemical bonds; and performing photocatalytic treatment on the DLC film, to break at least some of the carbon-hydrogen chemical bonds and reduce content of hydrogen elements in the DLC film.

A method for creating a hydrophilic antimicrobial diamond coating on a silicon or glass surface includes providing a silicon or glass surface, creating a second surface by seeding a plurality of nanodiamond particles on the silicon or glass surface by microwave plasma chemical vapor deposition (MPCVD), and forming a silver nitrate and hydroxylamine solution. A third surface may be created by seeding a plurality of silver nanoparticles onto the second surface by spraying the silver nitrate and hydroxylamine solution onto the second surface and maintaining the silver nitrate and hydroxylamine solution on the second surface for a predetermined time. The third surface may then be exposed to an oxygen plasma treatment.

Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.