Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

The present disclosure provides a method of fabricating a diamond membrane. The method comprises providing a substrate and a support structure. The substrate comprises a diamond material having a first surface and the substrate further comprises a sub-surface layer that is positioned below the first surface and has a crystallographic structure that is different to that of the diamond material. The sub-surface layer is positioned to divide the diamond material into first and second regions wherein the first region is positioned between the first surface and the sub-surface layer. The support structure also comprises a diamond material and is connected to, and covers a portion of, the first surface of the substrate. The method further comprises selectively removing the second region of the diamond material from the substrate by etching away at least a portion of the sub-surface layer of the substrate.

There are provided a food container having a silicon incorporated diamond like carbon (Si-DLC) layer and a method thereof. The food container includes a container made of a plastic material; an intermediate thin layer formed on a surface of the container; and a Si-DLC layer formed on the intermediate thin layer. Accordingly, it is possible to provide porous plastic container having a Si-DLC layer and a manufacturing method thereof, which can implement high oxygen barrier properties and excellent mechanical characteristics by stably depositing a Si-DLC layer on a food container having lower surface energy without breaking the Si-DLC layer.

A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

According to the present disclosure, a coated member is provided with a base material and a diamond layer located on the base material. When a ratio (SP3/SP2) obtainable from an SP3 peak derived from diamond crystals measurable by Raman spectroscopy and an SP2 peak derived from a graphite phase is referred to as an SP3 ratio, an SP3 ratio at a first measuring point with a thickness up to 1 m extending from an interface of the base material and the diamond layer toward the diamond layer is higher than an SP3 ratio at a second measuring point that is intermediate in a thickness direction of the diamond layer.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

A polycrystalline CVD synthetic diamond work piece for use in a polycrystalline CVD synthetic diamond tool, the polycrystalline CVD synthetic diamond work piece comprising: a working surface; and a rear mounting surface; wherein an average lateral grain size of the rear mounting surface is no less than 10 m, and wherein the working surface comprises: (a) smaller diamond grains than the rear mounting surface; (b) an average lateral grain size in a range 10 nm to 15 m; and (c) a Raman signal generated by a laser focused on the working surface which exhibits one or more of the following characteristics: (1) an sp3 carbon peak at 1332 cm.sup.1 having a full width half-maximum of no more than 8.0 cm.sup.1, (2) an sp2 carbon peak at 1550 cm.sup.1 having a height which is no more than 20% of a height of an sp3 carbon peak at 1332 cm.sup.1 after background subtraction when using a Raman excitation source at 633 nm; and (3) an sp3 carbon peak at 1332 cm.sup.1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm.

A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 m wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm.sup.1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm.sup.1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.

A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.