A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L.sub.1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M.sub.1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°<θ<90° (1), 0.21≤S/k≤0.35 (2), 1.17≤(L.sub.1+M.sub.1)/k≤1.55 (3), k=2*(L.sub.1+M.sub.1)/tan θ+S (4) are satisfied.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.

The manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber, and a raw material gas nozzle. The crystal growth section has a substrate supporting member, and reactive gas nozzles. The gas flow channel includes a first flow channel, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in the reaction container. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.

A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.

Provided is a compound represented by the following general formula (1) or (2):

##STR00001##

where R.sup.1 to R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.5 and R.sup.6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M.sup.1 represents a gallium atom or an indium atom;

##STR00002##

where R.sup.7 to R.sup.10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M.sup.2 represents a gallium atom or an indium atom.

Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.

A cutting tool includes: a substrate; a hard layer provided on the substrate; and a titanium carbonitride layer provided on the hard layer, wherein a thickness of the titanium carbonitride layer is more than or equal to 2 μm, a hardness of the titanium carbonitride layer at a room temperature is more than or equal to 35 GPa, and a Young's modulus of the titanium carbonitride layer at the room temperature is less than or equal to 650 GPa.

The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO.sub.4 substrate, comprising following steps: (1) providing a ScAlMgO.sub.4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO.sub.4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO.sub.4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.

A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw material of the processing gas and the carrier gas flows therethrough; a concentration tank connected to a downstream of the mixed gas flow path, accommodating a porous member including a metal-organic framework; a desorption mechanism that desorbs the processing gas adsorbed to the porous member; and a concentration gas flow path that allows the processing gas desorbed from the porous member to flow to the chamber.