A CVD apparatus for manufacturing a III-nitride-based layer having a rotating wafer carrier positioned inside a reaction chamber that receives a mixture of a nitrogen gas source and a group III element gas source. Recesses are formed within the wafer carrier, each including a satellite disc of thickness x for accepting a wafer of thickness t. The satellite disc includes a peripheral notch of height a, and a notch thickness of x−a=b. A peripheral retaining ring includes a vertical rise portion extending a distance of e+f and a laterally-extending portion, the laterally-extending portion engaging the satellite disc notch. A gap c is formed between the substrate and a surface of the satellite disc. The relationship of a+b+c+t=b+e+f is satisfied such that laminar flow occurs in the region of the retaining ring.

Provided are: an oriented electrical steel sheet having a high tension applied to a steel sheet and excellent adhesion to a film; and a method for producing the same. This oriented electrical steel sheet includes: a steel sheet; a film A containing a crystalline material disposed on the steel sheet; and a film B containing a vitreous material disposed on the film A, wherein an element profile, which is obtained by using a high-frequency glow discharge light-emission surface analysis method, in the direction from the film B to the steel sheet satisfies formulae (1) and (2). 0.35≤(t.sub.A/t.sub.Fe/2)≤0.75 . . . (1), 0.25≤(t.sub.A/2/t.sub.Fe/2)≤1.00 . . . (2), where t.sub.A represents the peak time of an alkali metal element profile, t.sub.A/2 represents the half time of an alkali metal.

A method for preparing a modified polypropylene film, the modified polypropylene film comprising a polypropylene film; and, an oxide layer and/or nitride layer, each of which has a thickness of 20-500 nm, on a surface of the polypropylene film; the method comprising: depositing the oxide layer or nitride layer on a surface of the polypropylene film by an Atomic Layer Deposition (ALD) process to obtain the modified polypropylene film; wherein the step of depositing the oxide layer or nitride layer comprises: placing the polypropylene film in an ALD reaction chamber; vacuumizing; heating up; introducing a carrier gas; and, passing at least two precursors into the reaction chamber alternately for reaction, resulting in the modified polypropylene film; wherein the precursors comprise a precursor for providing a metal element or Si, and a precursor for providing an oxygen or nitrogen element.

A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

An epitaxial deposition process, such as atomic layer deposition, is provided for forming a thin film comprising beta-gallium oxide (β-Ga.sub.2O.sub.3) on a substrate, such as sapphire. The process involves depositing a buffer layer of metastable Ga.sub.2O.sub.3, such as α-Ga.sub.2O.sub.3, on the substrate, and then reacting a gallium precursor, such as TEG, with an oxygen precursor, such as oxygen plasma, to deposit a layer comprising β-Ga.sub.2O.sub.3 on the buffer layer. The Ga.sub.2O.sub.3 film formed by the process may comprise highly oriented crystalline β-Ga.sub.2O.sub.3, with negligible amounts of other Ga.sub.2O.sub.3 polymorphs.

A metal organic chemical vapor deposition system includes a reaction chamber, a first heater arranged on a first side of the reaction chamber, and a second heater arranged on a second side of the reaction chamber. A controller is configured to selectively control an amount of heat applied by the second heater to the reaction chamber depending on a type of vapor deposition being performed in the reaction chamber.

Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.

A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage V.sub.bias_.sub.substrate may be applied to the substrate.

A surface-coated cutting tool including a tool substrate containing WC crystal grains and insulating grains, and a coating layer composed of a multiple nitride of Ti, Al, and V and disposed on the surface of the tool substrate. The multiple nitride is represented by a compositional formula: Ti.sub.aAl.sub.bV.sub.cN satisfying the following relations:
0.25≤a≤0.35,
0.64≤b≤0.74,
0<c≤0.06, and
a+b+c=1
wherein each of a, b, and c represents an atomic proportion. The coating layer is characterized by exhibiting a peak attributed to a hexagonal crystal phase and a peak attributed to a cubic crystal phase as observed through X-ray diffractometry.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.