Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as SbTe, GeTe, GeSbTe, BiTe, and ZnTe thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as SbSe, GeSe, GeSbSe, BiSe, and ZnSe thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

A method for fabricating a wear-resistant optical film on a quartz substrate, and to a wear-resistant optical film and use of a wear-resistant optical film. The wear-resistant optical film includes a zinc sulphide layer on a first titanium oxide layer, the wear-resistant optical film arranged on the quartz substrate, the first titanium oxide layer improving the adhesion of the wear-resistant optical film to the quartz substrate. The method includes a) first, depositing the first titanium oxide layer on the quartz substrate with ALD and at least two precursors, and b) depositing the zinc sulphide layer on the first titanium oxide layer with ALD and at least two precursors. A wear-resistant optical film and use thereof are also disclosed.

A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (11); forming a luminescent layer (12), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer (13) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al.sub.2O.sub.3 and zirconium oxide ZrO.sub.2 sub-layers.

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as SbTe, GeTe, GeSbTe, BiTe, and ZnTe thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as SbSe, GeSe, GeSbSe, BiSe, and ZnSe thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.