According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

The invention provides metal liquid chromatography components with uniformly coated internal surfaces and methods for achieving the same. The invention addresses the problem of corrosion or interference of metal components in the flow path for LC analyses in which the sample interacts with metal ions or surfaces. The invention also alleviates the difficulties in coating very long metal tubes and very small metal channels with an inert, continuous coating that adheres well to metal surfaces. The metal flow path is rendered inert by the coating, and thus compatible with bioanalytical separations, for example, by using a vapor phase deposition process to coat the inner surfaces with a coating that continuously covers all metal surfaces in the flow path.

A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

A process for manufacturing a composite structure comprises: a) providing an initial substrate made of monocrystalline silicon carbide, b) epitaxially growing a monocrystalline silicon carbide donor layer on the initial substrate to form a donor substrate 111, c) implanting ions into the donor layer to form a buried brittle plane defining the the donor layer, d) depositing, using liquid injection-chemical vapor deposition at a temperature below 1000° C., a carrier layer on the donor layer, the carrier layer comprising an at least partially amorphous SiC matrix, e) separating the donor substrate along the brittle plane to form an intermediate composite structure comprising the donor layer on the carrier layer f) heat treating the intermediate composite structure at a temperature of between 1000° C. and 1800° C. to crystallize the carrier layer and form the polycrystalline carrier substrate, and g) applying mechanical and/or chemical treatment(s) of the composite structure.