A method for forming ceramic matrix composite (CMC) component includes forming a fiber preform, positioning the fiber preform into a chemical vapor infiltration reactor chamber, and densifying the fiber preform. Densification includes infiltrating the fiber preform with a first gas comprising precursors of silicon carbide and infiltrating the fiber preform with a second gas comprising a first rare earth element, wherein the steps of infiltrating the fiber preform with the first gas and infiltrating the fiber preform with the second gas are conducted simultaneously to produce a first rare earth-doped silicon carbide matrix in a first region of the component.

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

The present invention addresses the issue of providing: an SiC substrate having a dislocation conversion layer that can reduce resistance; and a novel technology pertaining to SiC semiconductors. This SiC substrate and SiC semiconductor device comprise a dislocation conversion layer 12 having a doping concentration of at least 1×10.sup.15 cm.sup.−3. As a result of comprising a dislocation conversion layer 12 having this kind of doping concentration: expansion of basal plane dislocations and the occurrence of high-resistance stacking faults can be suppressed; and resistance when SiC semiconductor devices are produced can be reduced.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF.sub.3 plasma effluents, and greater than or about 1000 sccm of O.sub.2 plasma effluents.

A vessel has a lumen defined at least in part by a wall. The wall has an interior surface facing the lumen, an outer surface, and a plasma-enhanced chemical vapor deposition (PECVD) coating set supported by the wall. The PECVD coating set comprises a water barrier coating or layer having a water contact angle from 80 to 180 degrees, applied using a precursor comprising at least one of a saturated or unsaturated fluorocarbon precursor having from 1 to 6 carbon atoms and a saturated or unsaturated hydrocarbon having from 1 to 6 carbon atoms. Optionally, the coating set includes an SiOx gas barrier coating or layer from 2 to 1000 nm thick, in which x is from 1.5 to 2.9 as measured by x-ray photoelectron spectroscopy (XPS), and optionally other related coatings.

Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the peak strength in a wave number range of 760-780 cm.sup.−1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm.sup.−1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.

Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the diffraction peak strength in a diffraction angle 2θ range of 33-34° in an X-ray diffraction pattern is regarded as “A” and the diffraction peak strength of the SiC(111) plane in the X-ray diffraction pattern is regarded as “B”, then the ratio (A/B) is not more than 0.018.