A method for depositing a boron nitride film is provided. In the method, a seed layer is formed on a surface of a substrate by supplying an aminosilane gas to the surface of the substrate. The surface of the substrate includes bases having different incubation times for depositing a boron nitride film. A boron nitride film is deposited on the seed layer.

A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.

Methods for depositing boron-containing films on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form the boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures can be sequential or simultaneous. The boron-containing films are selectively deposited on one material (e.g., SiN or Si) rather than on another material (e.g., silicon oxide).

A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, includes a base substrate; a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and a hexagonal boron nitride film that is doped with carbon and oxygen that is disposed on the gamma-alumina film, and that has reduced defects due to properties of the gamma-alumina film, wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film and includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9.

A method of fabricating a CMC part, includes coating a plurality of tows with an interphase by transporting the tows through a treatment chamber in which a gas phase is injected, the tows being tensioned during their transport and the interphase being formed by vapor deposition from the injected gas phase; forming a fiber preform by performing three-dimensional weaving using the tows coated with the interphase; and forming a consolidated fiber preform by treating the fiber preform by chemical vapor infiltration to form a consolidation phase on the interphase, the consolidation phase comprising silicon carbide and having a Young's modulus greater than or equal to 350 GPa.

The present invention is to provide: a method for producing a novel hexagonal boron nitride thin film suitable for industrial use such as application to electronics, in which a hexagonal boron nitride thin film having a large area, a uniform thickness of 1 nm or more, with few grain boundaries can be produced inexpensively; and a hexagonal boron nitride thin film. The hexagonal boron nitride thin film according to the present invention is characterized by having a thickness of 1 nm or more, and an average value of the full width at half maximum of the E.sub.2g peak obtained from Raman spectrum of 9 to 20 cm.sup.−1.

Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.

Provided are an amorphous boron nitride film and an anti-reflection coating structure including the amorphous boron nitride film. The amorphous boron nitride film has an amorphous structure including an sp.sup.3 hybrid bond and an sp.sup.2 hybrid bond, in which a ratio of the sp.sup.3 hybrid bond in the amorphous boron nitride film is less than about 20%.

A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.