A method of forming a bulk product includes the step of coating a particulate conductive phase material with a binder phase, and forming the coated conductive phase material into at least one of sheet stock, tape formed into a bulk material. A method of forming a bulk product includes the step of coating a particulate conductive phase material with a binder phase and forming the coated conductive phase material into a bulk material. The conductive phase material includes at least one of two dimensional materials, single layer materials, carbon nanotubes, boron nitride nanotubes, aluminum nitride and molybdenum disulphide (MoS.sub.2). A component is also disclosed.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A deposition method includes preparing a substrate having a recess. The deposition method includes supplying a first gas onto the substrate to deposit a boron nitride film in the recess, the first gas including a boron-containing gas and a nitrogen-containing gas. The deposition method includes supplying a second gas onto the substrate to heat-treat the boron nitride film, the second gas being free of the boron-containing gas and including the nitrogen-containing gas.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (ρ.sub.max/ρ.sub.min) of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (ρ.sub.1600/ρ.sub.800) of electrical resistivity at 1600° C. to that at 800° C. of 1.14 to 1.30.

The technology subject of the present application concerns methods and systems for manufacturing and producing stable polarized or ferroelectric layered materials.

In an embodiment an ionization detector includes a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons, a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE and a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons.

Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

A coated substrate includes a metallic substrate and a ceramic coating on the metallic substrate. The ceramic coating includes one or more layers, and a total thickness of the ceramic coating is in a range of 2 nm to 200 nm. Coating a metallic substrate includes disposing a first ceramic coating layer on the metallic substrate and disposing one or more additional ceramic coating layers on the first ceramic coating layer to yield a laminated substrate. A total thickness of the ceramic coating layers on the laminated substrate is in a range of 2 nm to 200 nm.

A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating, includes heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, wherein the segment of fibre is in the presence of a supercritical phase of the precursor of the coating in the reactor and the coating is formed by supercritical phase chemical deposition in the reactor.