Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture “tortuous” nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

A plasma processing apparatus is provided. The plasma processing apparatus is provided with an upper electrode, a lower electrode, and an electromagnetic wave emission port. The upper electrode is provided so as to allow discharging a processing gas into a processing container. The lower electrode is provided so as to holding a workpiece in the processing container. The electromagnetic wave emission port is provided at a height position between a height position of the upper electrode and a height position of the lower electrode, and is open toward a center of the processing container.

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

A system for coating ceramic fibers for use in manufacturing a ceramic matric composite (CMC) article includes a frame having a plurality of frame members arranged so as to create a void therebetween. At least one of frame members includes a hollow body and at least one perforated hole defined in the hollow body. Thus, the ceramic fibers are securable at respective ends of the frame and extend across the void. The frame also includes an inlet in fluid communication with the perforated hole(s) so as to allow a coating material to flow into and through the hollow body and out of the perforated hole(s) at a location of at least a portion of one of the ceramic fibers. As such, the coating material is configured to cause the portion of one of the ceramic fibers to separate from the frame such that the portion is uniformly coated with the coating material.

A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formula C: ##STR00001##
as defined herein.