A method of manufacturing an amorphous carbon thin film is provided. The method includes the following steps: providing a substrate in a reaction chamber; flowing a precursor and a carrier gas into the reaction chamber; and performing a PECVD method to deposit the amorphous carbon thin film on the substrate. Wherein, the precursor includes a compound having a CN functional group.

In order to provide g-C.sub.3N.sub.4 capable of being simply and easily handled, a g-C.sub.3N.sub.4 film is produced by heating, as a starting material, a compound represented by X.sup.+.sub.mY.sup.m, wherein X.sup.+ is a guanidium ion or the like ion, and Y.sup.m is an anion, to vaporize the compound or its reactant, and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative electric charges or having electrons, so that the compound or the reactant is polymerized on the base material to generate g-C.sub.3N.sub.4.

A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700 C. to about 800 C. under a hydrogen (H.sub.2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

Provided are extrusion tools such as extrusion dies or portions thereof having a surface with at least one coating thereon, and methods of forming the same are disclosed. The at least one coating is formed from a composition that is a metal aluminum nitride or carbonitride with particular characteristics such that the amount of aluminum varies within the coating between a coating outer surface and an intermediate thickness within the coating. The resulting coatings have tailored physical and performance characteristics that result in improved wear and extrusion performance.

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.