Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.

A method includes coating, via chemical vapor deposition, electronics disposed on a printed circuit board (PCB) with an electrical insulation coating of between one micron to 25 microns. The method further include depositing, on the electrical insulation coating, a metallic nano-layer comprising a porous metallic nano-structure. The method further includes, after the coating and the depositing, immersing the PCB in a water-based fluid to cool the electronics while the electronics are powered on.

Embodiments of the disclosure relate to methods for depositing blocking layers. Some embodiments utilize blocking compounds comprising more than one reactive moiety on a substrate with multiple metallic materials. Some embodiments utilize fluorinated blocking compounds to improve the stability of the blocking layer during subsequent plasma-assisted selective deposition processes.

An oxide film forming device includes: a chamber in which a target workpiece is removably placed; a gas supply unit arranged at a position opposed to a film formation surface of the target workpiece placed in the chamber; and a gas discharge unit arranged to discharge a gas inside the chamber by suction to the outside of the chamber. The gas supply unit has a raw material gas supply nozzle, an ozone gas supply nozzle and an unsaturated hydrocarbon gas supply nozzle with supply ports thereof opposed to the film formation surface of the target workpiece at a predetermined distance away from the film formation surface. A raw material gas, an ozone gas and an unsaturated hydrocarbon gas supplied from the respective supply nozzles are mixed in a space between the supply ports and the film formation surface.

A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

A memory cell formed in a pillar structure between a first electrode and a second electrode includes laminated encapsulation structure. In one example, the pillar includes a body of ovonic threshold switch material, carbon-based intermediate layers, metal layers and a body of phase change memory material in electrical series between the first and second electrodes. The laminated encapsulation structure surrounds the pillar. The laminated dielectric encapsulation structure comprises at least three conformal layers, including a first layer of material, a second conformal layer of a second layer material different from the first layer material; and a third conformal layer of a third layer material different from the second layer material.

Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

[Object] To provide a barrier laminate that includes a multilayer substrate with high interlayer adhesiveness to an evaporated film and that has high gas barrier properties.

[Solution] A barrier laminate according to the present invention includes a multilayer substrate and an evaporated film, wherein the multilayer substrate includes at least a polypropylene resin layer and a surface coating layer, the polypropylene resin layer is subjected to a stretching process, the surface coating layer contains a resin material with a polar group, and the evaporated film is composed of an inorganic oxide.