A method of forming Group 2 metal containing films on a substrate comprises a) exposing the substrate to a vapor of a Group 2 metal containing film forming composition that contains an alkaline earth metal precursor having the formula:

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wherein M is Be, Mg, Ca, Sr, or Ba; R.sup.1-R.sup.6 each independently are a C.sub.1-C.sub.10 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide, b) depositing at least part of the alkaline earth metal precursor onto the substrate to form a Group 2 metal-containing film through a vapor deposition process; and c) repeating a) and b) until a desired thickness of the Group 2 metal-containing film is formed.

A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm/sec) of the mist at any one of the two or more opposing gas inlets satisfies L0.8V-200, wherein V (cm.sup.3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7-x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

A substrate processing method includes preparing a substrate having a base film formed thereon; forming a protective film on the base film, performing a dry etching process on the substrate in which a stacked structure of the base film and the protective film is formed, and removing the protective film from the substrate in which the stacked structure of the base film and the protective film is formed. The forming the protective film on the base film includes forming an MgO film as the protective film by repeating supplying an organometallic gas containing magnesium (Mg) to the substrate and supplying an oxidizing agent to the substrate at a film formation temperature of 250 degrees C. or lower.

The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7-x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.