A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

According to at least one feature of the present disclosure, a method of forming a film of an optical element, includes: positioning a substantially transparent lens in a reactor chamber, wherein the lens defines a curved surface; exposing the lens to a first precursor comprising one of lanthanum or gadolinium such that the first precursor is deposited on the curved surface of the lens; exposing the first precursor on the curved surface to a first oxidizer such that the first precursor present on the curved surface of the lens reacts with the first oxidizer to form a high refractive index layer of the film; exposing the high refractive index layer to a second precursor such that the second precursor is deposited on the high refractive index layer; and exposing the second precursor on the high refractive index layer to a second oxidizer such that the second precursor present on the high refractive index layer reacts with the second oxidizer to form a low refractive index layer of the film.

A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.

A process for coating a gas turbine engine disk comprises placing the disk having an outer surface into a chamber, the chamber configured to perform atomic layer deposition; injecting a first reactant into the chamber; forming a first monolayer gas thin film on the outer surface; removing the first reactant from the chamber; injecting a second reactant into the chamber; reacting second reactant with the first monolayer gas thin film; removing the second reactant from the chamber; and forming a protective barrier coating on the outer surface.

Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.

A surface coated cutting tool includes a tool substrate; and a hard coating layer on the tool substrate. The hard coating layer includes, in sequence from the tool substrate toward a surface of the tool, a titanium carbonitride inner layer, a titanium nitride lower intermediate layer, a titanium carbonitride upper intermediate layer, a titanium oxycarbonitride bonding auxiliary layer, and an aluminum oxide outer layer. Titanium nitride grain boundaries in the lower intermediate layer and titanium carbonitride grain boundaries in the upper intermediate layer are continuous from titanium carbonitride grain boundaries in the inner layer. The texture coefficient TC(422) of titanium carbonitride in the inner layer and the upper intermediate layer is 3.0 or more, and the texture coefficient TC(0 0 12) of α-aluminum oxide in the outer layer is 5.0 or more.