The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:

##STR00001##

where R.sup.1 and R.sup.2 each independently represent an alkyl group having 1 to 5 carbon atoms, R.sup.3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R.sup.1 to R.sup.3 is substituted with a fluorine atom.

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented, by the following formula (1) :

##STR00001##

where R.sup.1 and R.sup.2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom;

##STR00002##

where R.sup.11 and R.sup.12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1);

##STR00003##

where R.sup.21 to R.sup.23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R.sup.21 and R.sup.22 represent different groups.

The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.

Provided is a zinc compound represented by the following general formula (1) or (2):

##STR00001##

in the formula (1), R.sup.1 represents an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., R.sup.2 and R.sup.5 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R.sup.3 and R.sup.4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.;

##STR00002##

in the formula (2), R.sup.10, R.sup.11, R.sup.14, and R.sup.15 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R.sup.9, R.sup.12, R.sup.13, and R.sup.16 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.

The device for processing a substrate according to an embodiment of the present disclosure includes a chamber, a substrate supporting unit which is provided inside the chamber and supports a substrate provided inside the chamber, a gas distribution unit which is provided inside the chamber to face the substrate supporting unit and distributes a process gas toward the substrate supporting unit, a first temperature control unit which is installed in a central region of the gas distribution unit and increases a temperature of the central region, and a second temperature control unit which is installed in an edge region of the gas distribution unit and increases a temperature of the edge region more rapidly than the temperature of the central region.

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R.sub.x—Sn-A.sub.4-x, wherein: A is selected from the group consisting of (Y.sub.aR′.sub.z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R′ group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

Method for reversible bonding between a first element and a second element, comprising the implementation of the following steps:

a) producing at least one oxide layer on at least one first face of the first element or of the second element;

b) joining the first face of the first element with the first face of the second element such that the oxide layer forms a bonding interface between the first element and the second element;

c) disjoining the second element with regard to the first element by the application of a heat treatment under controlled humid atmosphere physically and/or chemically degrading the oxide layer.

Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.

A film forming method of forming a metal oxide film on a substrate in a processing container, includes: supplying a raw material gas containing an organometallic precursor into the processing container; removing a residual gas remaining in the processing container after the supplying the raw material gas; subsequently, supplying an oxidizing agent that oxidizes the raw material gas into the processing container; removing a residual gas remaining in the processing container after the supplying the oxidizing agent; and supplying a hydrogen-containing reducing gas into the processing container, simultaneously with the supplying the raw material gas or sequentially after the supplying the raw material gas.