There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7?x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R.sup.1 represents a methyl group or an ethyl group, R.sup.2 represents a hydrogen atom or a methyl group, R.sup.3 represents a C.sub.1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

A method for depositing a high temperature superconductor (=HTS) onto a tape (2), in particular by pulsed laser deposition (=PLD). The tape is wound off a source reservoir (3), heated and transported through a deposition zone (21), and wound up at a target reservoir (5). HTS material (32) is deposited onto the heated transported tape in the deposition zone, and the tape is led through the deposition zone by a guide structure (4). During deposition of the HTS material, the source reservoir, the guide structure and the target reservoir are rotated around a common rotation axis (9), such that parts of the tape rotating along with the guide structure repeatedly cross the deposition zone. This permits depositing a HTS onto a tape, in particular by PLD, which allows a high quality of the deposited HTS material for long tape lengths.

A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.

A superconductor tape may be fabricated via Metal Organic Chemical Vapor Deposition (MOCVD) to achieve peel strengths greater than approximately 4.5 N/cm. The superconductor tape may be fabricated via MOCVD with a REBCO composition that includes the elements Samarium (Sm)-Barium(Ba)-Copper(Cu)-Oxygen(O). Varying levels of Copper (Cu) content can achieve peel strengths ranging between approximately 4.5 N/cm to approximately 8.0 N/cm.

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R.sup.1 represents a methyl group or an ethyl group, R.sup.2 represents a hydrogen atom or a methyl group, R.sup.3 represents a C.sub.1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

In a Cu wiring manufacturing method for manufacturing Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, a MnO.sub.x film that becomes a self-formed barrier film by reaction with the interlayer insulating film is formed at least on a surface of the recess by ALD. A CuO.sub.x film that becomes a liner film is formed on a surface of the MnO.sub.x film by CVD or ALD. An annealing process is performed on the substrate on which the CuO.sub.x film is formed and the CuO.sub.x film is reduced to a Cu film by oxidation-reduction reaction between the MnO.sub.x film and the CuO.sub.x film. A Cu-based film is formed on the Cu film obtained by reducing the CuO.sub.x film by PVD to fill the Cu-based film in the recess.

An anti-coking surface having a thickness up to 15 microns comprising from 15 to 50 wt. % of MnCr.sub.2O.sub.4 (for example manganochromite); from 15 to 25 wt. % of Cr.sub.0.23Mn.sub.0.08Ni.sub.0.69 (for example chromium manganese nickel); from 10 to 30 wt. % of Cr.sub.1.3Fe.sub.0.7O.sub.3 (for example chromium iron oxide); from 12 to 20 wt. % of Cr.sub.2O.sub.3 (for example eskolaite); from 4 to 20 wt. % of CuFe.sub.5O.sub.8 (for example copper iron oxide); and less than 5 wt. % of one or more compounds chosen from FeO(OH), CrO(OH), CrMn, Si and SiO.sub.2 (either as silicon oxide or quartz) and less than 0.5 wt. % of aluminum in any form provided that the sum of the components is 100 wt. % is provided on steel.