A canister for a semiconductor manufacturing device according to an embodiment of the present disclosure is provided with a sintered filter at the end of a dip tube into which a carrier gas is to be injected, and further provided with a porous container having excellent heat transfer rate inside a container, so that the precursor material filled inside the canister can be smoothly supplied to the thin film deposition device at a rear stage.

In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.

A Metalorganic chemical vapor phase epitaxy or vapor phase deposition apparatus, having a first gas source system, a reactor, an exhaust gas system, and a control unit, wherein the first gas source system has a carrier gas source, a bubbler with an organometallic starting compound, and a first supply section leading to the reactor either directly or through a first control valve, the carrier gas source is connected to an inlet of the bubbler through a first mass flow controller by a second supply section, an outlet of the bubbler is connected to the first supply section, and the carrier gas source is connected to the first supply section through a second mass flow controller by a third supply section, the first supply section is connected to an inlet of the reactor through a third mass flow controller.

There is provided a method for manufacturing graphene, the method comprising: forming graphene on a non-metallic surface of a substrate by CVD in a CVD reaction chamber, wherein the step of forming graphene comprises introducing a precursor in a gas phase and/or suspended in a gas into the CVD reaction chamber; wherein the precursor consists of one or more compounds selected from a C.sub.4—C.sub.10 organic compound; wherein the organic compound is branched such that the organic compound has at least three methyl groups; and wherein the organic compound consists of carbon and hydrogen and, optionally, oxygen, fluorine, chlorine and/or bromine.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Described herein are delivery containers, systems and methods using same for providing improvements to precursor utilization in the containers for deposition process, as well as the cleaning and refilling of the containers. The containers are designed with structures which allow a carrier gas to be delivered from a flow distributor. The flow distributor comprises a plurality of small openings (jets) through which the carrier gas enters the precursor chamber and impinges upon the surface of the chemical precursors to produce a vapor.

This invention relates to a process and an apparatus for synthesizing multiwall carbon nanotubes from high molecular polymeric wastes. The process comprises using induction heating in combination with catalytic chemical vapour deposition (CVD) with an array of catalytic materials to synthesize high value carbon nanotubes with better yield and purity from high molecular polymeric wastes.

A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

A bubbler apparatus may include a container, a lid, a sealing member and at least one routing member. As the lid is tightened to the container and the sealing member is compressed, the routing member(s) does not contact the inside bottom surface of the container. Instead, there is a small gap between the routing member and the bottom surface of the container. The routing member may compress the substance in the container that the gas is saturated with or may slice through the substance.