In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H.sub.2), and nitrogen (N.sub.2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×10.sup.18 atoms/cm.sup.3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.

One or more techniques and/or systems are disclosed for saturating a gas with a liquid-borne compound. A bubbler container may be configured to contain a carrier liquid, which comprises a desired compound. The container may comprise at least one channeling plane, disposed between the top and bottom of the container, which may be configured to allow gas bubbles to travel through a circuitous, channeling route. The gas can be introduced to the container at a bottom portion of the container, into the carrier liquid comprising the compound. Carrier gas bubbles formed in the liquid may be forced to travel the channeling route to a top portion of the container, where gas saturated with the compound may be collected.

(a) Loading a substrate into a process chamber; (b) supplying a processing gas including H.sub.2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); and (e) repeating (c) and (d) are provided.

A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Provided is a manufacturing method of an electrode for an electrochemical reaction, which is capable of minimizing a loss of a metal precursor and simultaneously reducing a manufacturing time. An embodiment of the present invention provides a manufacturing method of an electrode for an electrochemical reaction, which includes a process of forming a metal thin-film on a substrate disposed in a reactor and in which the metal thin-film is formed as a metal precursor gas derived from a metal precursor is thermally decomposed by a CO.sub.2-laser.

Apparatus and methods for supplying a vapor to a processing chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, each with two valves, in fluid communication with an ampoule. A bypass conduit connects the inlet conduit and the outlet conduit. A flow restrictive device restricts flow through the outlet conduit.

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.