Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. In an embodiment, a method includes subjecting a substrate surface having at least one feature to a film deposition process to form a conformal film over a bottom surface and along sidewall surfaces of the feature, subjecting the substrate surface to a treatment process to form respective halogen surface layers or respective halogen-terminated layers on the conformal film formed at respective upper portions of the sidewall surfaces, and performing sequentially and repeatedly the film deposition process and the treatment process to fill the feature with the film.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

A film forming apparatus for forming a silicon carbide film on a target substrate includes a substrate support on which the target substrate is placed, a gas supply mechanism configured to form a flow of a raw material gas along a direction perpendicular to a central axis of the substrate support from outside of the substrate support, and an induction coil configured to heat the target substrate. The gas supply mechanism supplies, in addition to a first Si-containing gas containing silicon without containing carbon and a first C-containing gas containing carbon without containing silicon, at least one of a second Si-containing gas having a thermal decomposition temperature higher than that of the first Si-containing gas and containing silicon without containing carbon and a second C-containing gas having a thermal decomposition temperature lower than that of the first C-containing gas and containing carbon without containing silicon, as the raw material gas.

A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.