A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic Ti.sub.zAl.sub.1-zN crystal grains, an atomic ratio z of Ti in the Ti.sub.zAl.sub.1-zN being 0.4 or more and less than 0.55, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 10 nm or more and 45 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 20 nm to 50 nm, a maximum value of 40 nm to 60 nm, and a minimum value of 10 nm to 30 nm.

A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic Ti.sub.zAl.sub.1-zN crystal grains, an atomic ratio z of Ti in the Ti.sub.zAl.sub.1-zN being 0.55 or more and 0.7 or less, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 40 nm or more and 95 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 50 nm to 100 nm, a maximum value of 90 nm to 110 nm, and a minimum value of 40 nm to 60 nm.

A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic Ti.sub.zAl.sub.1-zN crystal grains, an atomic ratio z of Ti in the Ti.sub.zAl.sub.1-zN being 0.5 or more and 0.65 or less, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 10 nm or more and 95 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 30 nm to 70 nm, a maximum value of 40 nm to 100 nm, and a minimum value of 20 nm to 40 nm.

[Problem]

To provide a coated cutting tool having excellent fracture resistance and thus allowing for the extension of tool life.

[Means for Resolution]

A covered cutting tool having a cemented carbide and a covering layer formed on the cemented carbide. The covered cutting tool includes a rake face, a flank face, and a cutting edge line part located between the rake face and the flank face. The coating layer includes a compound layer containing a compound having a composition represented by (Al.sub.xTi.sub.1-x)N. The average thickness T.sub.1 of the covering layer in the cutting edge line part and the average thickness T.sub.2 of the coating layer in the rake face at a position 2 mm or more away from the cutting edge line part toward the rake face are within specific ranges and satisfy T.sub.2 <T.sub.1. The residual stress S.sub.1 of the cemented carbide in the cutting edge line part and the residual stress S2 of the cemented carbide in the rake face at a position 2 mm or more away from the cutting edge line part toward the rake face satisfy S.sub.2 <S.sub.1.

Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.

A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

A substrate processing apparatus capable of preventing deflection of exhaust flow which may occur when an asymmetric exhaust structure is introduced includes: an exhaust unit providing an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is arranged asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through holes; and a lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes.

A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.