To provide a method and apparatus for production of a nitrogen compound film by a plasma, wherein the method and apparatus are suitable for area enlargement by a process at a higher pressure with lower power consumption, without applying a voltage to a base material, and without using a large chamber. In nitrogen compound production for producing a nitrogen compound by generating a microwave plasma, in a step of jetting a material gas containing a nitrogen-based gas onto a surface of a base material from a nozzle under flow rate control while applying a microwave to the material gas to thereby irradiate the surface of the base material with a plasma containing nitrogen-based reactive species generated from the material gas, the pressure is set higher than a pressure at which the mean free path of ions in the plasma is shorter than the Debye length.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

A method for manufacturing polysilicon, according to the present invention, is capable of manufacturing polysilicon with high purity more efficiently in such a manner that a high-temperature and high-speed air stream is formed at the center of a reaction tube, and a high-temperature region may be formed by a vortex formed by the high-temperature and high-speed air stream, so that a raw gas supplied from the side wall of the reaction tube flows by the guiding of the vortex, thereby increasing a stay time and a reaction time of the raw gas within the reaction tube. Furthermore, since the inner wall of the reaction tube is provided with a heat release means, the rapid cooling of a silicon crystal deposited on the inner wall of the reaction tube can induce a columnar crystal in which the silicon crystal is solidified in a direction perpendicular to a crystal face, and it is easy to desorb the silicon crystal produced by rapid heat release via the inner wall of the reaction tube.

Apparatus is described for coating of three dimensional objects such as glass jars or bottles, during a continuous manufacturing process, by Chemical Vapour Deposition (CVD). The objects pass through tunnel having one or more vertical arrays of nozzles located in the sidewalls. The nozzles deliver CVD precursors and, being independently variable, allow for variation of the precursor concentration along the height of the object. Thus, the thickness of the resultant coating may be so varied. Preferred embodiments include corresponding exhaust arrays, aligned with the nozzles and one or more air curtains which isolate the interior of the tunnel from the external environment.

In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250 C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus.

Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

There is provided a technique including a process chamber in which a substrate is processed, and a gas supplier including a first ejection port that ejects a first gas on an upper position in a direction perpendicular to a surface of the substrate and a second ejection port that ejects a second gas on a lower position in the direction.

The invention relates to a pro-biofilm coating applied by means of cold atmospheric plasma polymerization of a precursor on a substrate. The coating has a roughness such that it promotes the creation of more than 100% biofilm on the substrate, where the 100% of biofilm is the one as produced on the same substrate being devoid of said pro-biofilm coating. The invention also relates to a method of producing said pro-biofilm coating and a substrate coated with same.

Devices for deposition of material via organic vapor jet printing (OVJP) and similar techniques are provided. The depositor includes delivery channels ending in delivery apertures, where the delivery channels are flared as they approach the delivery apertures, and/or have a trapezoidal shape. The depositors are suitable for fabricating OLEDs and OLED components and similar devices.

Devices for deposition of material via organic vapor jet printing (OVJP) and similar techniques are provided. The depositor includes delivery channels ending in delivery apertures, where the delivery channels are flared as they approach the delivery apertures, and/or have a trapezoidal shape. The depositors are suitable for fabricating OLEDs and OLED components and similar devices.