A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

Exemplary processing chambers may include a body having sidewalls and a bottom plate. The bottom plate may define an exhaust opening and a gas inlet. The chambers may include a faceplate seated atop the body. The chambers may include a purge ring seated atop the bottom plate. The purge ring may include a ring body having an outer edge and an inner edge defining an open interior. The ring body may have a surface disposed against the bottom plate. The ring body may define an opening aligned with the exhaust opening. The surface may define a fluid port aligned and coupled with the gas inlet. The surface may define arcuate grooves extending into the fluid port. The arcuate grooves may be parallel with the inner and outer edges. The surface may define radial grooves extending from the open interior to an arcuate groove.

An electrostatic-chuck heater is a Johnsen-Rahbek electrostatic-chuck heater and is used in a process of forming a conductive film on a wafer. The electrostatic-chuck heater includes a disc-shaped ceramic base including an electrostatic electrode and a heating resistor, and a hollow shaft attached to a side of the ceramic base that is opposite a wafer-mounting surface. A protruding ring is provided on the wafer-mounting surface and having an outside diameter smaller than a diameter of the wafer. A through-hole extends in a peripheral wall of the hollow shaft from a lower end through to an area of the wafer-mounting surface that is on an inner side with respect to the protruding ring. The through-hole allows gas to be supplied from the lower end of the hollow shaft into a below-wafer space enclosed by the wafer-mounting surface, the protruding ring, and the wafer mounted on the wafer-mounting surface.

Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

An apparatus for processing a substrate may include a chamber, a substrate support, a showerhead structure and a purge ring structure. The purge ring structure may be arranged at an edge portion of the substrate support to inject a deposition-preventing gas, which may be supplied from the substrate support, to an edge portion of an upper surface of the substrate. The purge ring structure may include a purge ring and a plurality of bosses. The purge ring may be configured to surround the substrate. The bosses may be protruded from an inner surface of the purge ring in a radius direction of the substrate to form a gap between the inner surface of the purge ring and the edge portion of the substrate. The deposition-preventing gas may be supplied to the upper surface of the substrate through the gap.

An electrostatic-chuck heater is of a Johnsen-Rahbek type and is used in a process of forming a conductive film on a wafer. The electrostatic-chuck heater includes a disc-shaped ceramic base including an electrostatic electrode and a heating resistor, and a hollow shaft attached to a side of the ceramic base that is opposite a side having a wafer-mounting surface. A through-hole extends in a peripheral wall of the hollow shaft from a lower end through to an area of the wafer-mounting surface that is on an inner side with respect to a circular groove. The through-hole allows gas to be supplied from the lower end of the hollow shaft into a below-wafer space enclosed by the wafer-mounting surface, an outermost projection group, and the wafer mounted on the wafer-mounting surface.

Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid.

A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.

Embodiments of substrate processing equipment and rotatable substrate supports incorporating the same are provided herein. In some embodiments, the substrate support may include a pedestal having a substrate receiving surface, a shaft having an upper end, a lower end, and a central opening, where the shaft is coupled to the pedestal at the upper end, a hub circumscribing the shaft, where the shaft is rotatable with respect to the hub, and where the hub includes a first port that extends from an outer surface of the hub to a volume between the hub and the shaft, and a ferrofluid sealing assembly disposed between the hub and the shaft.