Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A support region of a substrate support is defined by an outer band. The support region comprises one or more openings in the top surface of the substrate support. The outer band comprises a plurality of spaced apart posts. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

A purge ring including a supply port configured for receiving gas. An outer channel is connected to the supply port. An outlet network is configured for an exit flow of the gas proximate to an inner diameter of the purge ring. The purge ring includes a plurality of channels configured for flow of the gas in a radial direction from the outer channel to the outlet network. The purge ring includes a plurality of passageways configured for reduced flow of the gas in the radial direction between the outer channel and the outlet network. The plurality of channels and the plurality of passageways are configured for providing a uniform pressure of the exit flow of the gas across the outlet network circumference.

A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

A substrate processing apparatus capable of selective processing a thin film in a bevel edge includes: a substrate support plate including a recess and at least one path formed in the recess; and a gas supply unit on the substrate support plate, wherein a first distance between a portion of the substrate support plate inside the recess and the gas supply unit is less than a second distance between the gas supply unit and the other portion of the substrate support plate outside the recess.

An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing.

A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

A method for manufacturing an epitaxial silicon wafer enables to lower carbon concentration in an epitaxial film. The method forming an epitaxial silicon wafer where an epitaxial film is formed on a silicon wafer in a reaction chamber including a wafer-holding susceptor that separates an upper and lower space communicating through a predetermined gap includes steps of forming a flow of a processing gas flowing laterally along an upper surface of the wafer in the upper space and a flow of a main purging gas flowing towards the susceptor upwardly in the lower space being formed simultaneously, setting a flow rate ratio of the main purging gas flow rate to the processing gas flow rate to be 1.0/100 to 1.5/100 where the processing gas flow rate is set as 100, and controlling a pressure in the upper space to be within an atmospheric pressure 0.2 kPa at least.

Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.