Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

A metal coated polymer membrane, a method for the production thereof, an electrofiltration device, or an electrosorption device, and a method of electrofiltration and electrosorption using a metal coated polymer membrane. The polymer membrane is coated with metal using Atomic Layer Deposition (ALD).

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

A flow rate control device 100 includes a flow rate control valve 8 having a valve element 8a and a piezoelectric element 8b for moving the valve element, and a control circuit 9 for controlling an operation of the flow rate control valve 8, wherein, in order to perform a pulsed fluid supply, the control circuit 9 is configured so as to open-loop control an applied voltage to the piezoelectric element so that it approaches the target voltage after once applying a voltage V1 exceeding a target voltage V0 corresponding to a target displacement of the piezoelectric element, when a pulsed flow rate setting signal is given.

This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10.sup.−3 mbar.

A polycrystalline diamond is formed on a substrate to form a polycrystalline diamond compact (PDC) cutter for a tool. The polycrystalline diamond has a cross-sectional dimension of at least 4 millimeters. The substrate includes tungsten carbide. An outer surface of the PDC cutter is at least partially surrounded with at least a single layer of coating by atomic layer deposition. The single layer of coating is configured to protect the PDC cutter from thermal degradation in response to exposure to a temperature greater than 700 degrees Celsius (° C.) and less than about 1050° C.

Method for manufacturing a semiconductor device includes: forming a first area and a second area of a peripheral area on a substrate; forming a first lamination structure in the first area, and forming a second lamination structure in an array area and the second area; performing thermal treatment on the substrate so that atoms in a work function layer are diffused into a second dielectric layer, and an interface interaction occurs between the second dielectric layer and a first dielectric layer; removing the first lamination structure to the second dielectric layer, and removing the second lamination structure to the second dielectric layer; forming a fourth barrier layer and a second conductive layer, a content ratio of metallic element to non-metallic element in a first barrier layer being less than a content ratio of metallic element to non-metallic element in a second barrier layer and a third barrier layer.