Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber, the gas inlet channel including at least two channel segments, which are sequentially communicated in an axial direction of the through-hole, and orthographic projections of any two adjacent channel segments on a plane perpendicular to the axial direction of the through-hole being staggered from each other. The present solution solves the problem that accidental sparking is easy to occur in an existing reaction chamber.

A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.

One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

A processing apparatus is provided. The processing apparatus includes a processing chamber, a pump, and an intersecting module. The process chamber has a gas outlet. The pump communicates with the gas outlet. The pump is configured to exhaust gas from the processing chamber via the gas outlet. The intersecting module is positioned between the pump and the gas outlet. The intersecting module includes a plurality of support members and a plurality of internal ventilating plates. The support members are arranged along a longitudinal direction. Each of the internal ventilating plates has a plurality of orifices. At least one of the internal ventilating plates is positioned between two of the support members positioned adjacent to each other in the longitudinal direction. Each of the internal ventilating plates is inclined relative to a transversal direction that is perpendicular to the longitudinal direction.