A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.

The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

Disclosed is a gas distributor, including: a nozzle unit formed by joining a pair of nozzle members together such that the nozzle members face each other with a first nozzle gap defined between the nozzle members; and a nozzle assembly in which at least two nozzle units are assembled together in parallel, in which the nozzle gap includes a first flow path formed in parallel in a direction of the nozzle member, and a second flow path extended from the first flow path, formed with a smaller width than a width of the first flow path along a bonded surface, and discharging gas through an end portion of one side of the second flow path, and the second flow path is extended with the first flow path, and is inclinedly provided so that a width is gradually decreased in a portion adjacent to the first flow path.

The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

In a method for depositing semiconductor layers, a first process step is performed to deposit a layer containing gallium and a second process step is performed to deposit a layer containing indium. To prevent gallium from being incorporated from residues in the process chamber into the layer containing indium when the layer containing indium is deposited, a reactive gas containing indium is additionally supplied to the process chamber during the first process step and the first process parameters are adjusted such that the first layer contains no indium, or in an intermediate step between the first and second process steps, a reactive gas containing indium is supplied to the process chamber and the process parameters are adjusted such that no indium is deposited on the substrate during the intermediate step. In the second process step, the second process parameters are adjusted such that the second layer contains no gallium.

There is provided a substrate processing apparatus including: a processing chamber; a substrate support that is disposed in the processing chamber and holds a substrate; and a shower head facing the substrate support, the shower head including a shower plate formed with a gas flow path through which a gas is discharged, and a cooling plate holding and cooling the shower plate, and the cooling plate including a first plate having a gas distribution layer through which the gas is distributed, a second plate having a coolant passage through which a coolant is supplied and a gas diffusion space into which the gas distributed by the gas distribution layer is supplied, and a fastening member fastening the first plate and the second plate.

Cooling systems for the cooling of various sections of a gas phase reactor system, including a gas distribution sections and lower chamber sections, are disclosed. Exemplary cooling systems include cooling plates to regulate the temperature of the gas phase reactor system.

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.