An apparatus for performing a film forming process on a substrate, includes a rotary table, a separation region including a separation gas supply configured to supply a separation gas and a main ceiling surface configured to form a separation gas gap for the separation gas, a central region including a central ceiling surface arranged around the rotation center, a rotary shaft exhaust passage made of a tubular body and connected to the rotary table to rotate the rotary table about the rotation center, the rotary shaft exhaust passage having an exhaust path formed therein, a ceiling surface side exhaust passage formed to vertically penetrate a member constituting the central region, a first exhaust port configured to exhaust the first processing gas to one of the two exhaust passages, and a second exhaust port configured to exhaust the second processing gas to the other one of the two exhaust passages.

A film forming apparatus includes: substrate processing chambers, which is formed by partitioning a space in a processing container in a circumferential direction when viewed from top, and in each of which a substrate is received and a receiving port for processing gases is formed to face a central portion of the processing container; a gas supply including a rotating body provided in the central portion of the processing container, and having a first gas supply hole and a second gas supply hole which are formed at different positions on a side peripheral surface of the rotating body along a circumferential direction; and a rotary mechanism configured to rotate the rotating body around a vertical axis such that a first processing gas and a second processing gas are switched and repeatedly supplied to the substrate processing chambers via the receiving ports, respectively.

According to an embodiment of the present disclosure, a thin film forming apparatus includes a chamber, a plurality of gas inlets that are formed at an upper portion of the chamber and receive at least two reaction gas and precursors for radical reaction, and a radical unit configured to generate radicals by reacting the reaction gas provided through the gas inlet and deposit a thin film on a substrate by spraying the radicals and the precursors downward. The radical unit is configured with a plurality of plates, a precursor spray path is configured to be sprayed from the radical unit after the precursors are sprayed to a plurality of paths greater than precursor spray paths of the gas inlet in an uppermost plate among the plurality of plates, and a reaction gas spray path is configured not to overlap with the precursor spray path.

Exemplary dual-channel showerheads may include an upper plate that defines a first plurality of apertures. The showerheads may include a base having a lower plate. The lower plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled with a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead through a bottom surface of the showerhead. The base may define a gas inlet that is fluidly coupled with the third plurality of apertures. The base may be detachably coupled with the upper plate using one or more fastening mechanisms. The showerheads may include a compressible gasket positioned between the upper plate and the lower plate.

A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.

Disclosed are a transition metal chalcogenide thin-layer material, a preparation method and an application thereof. The preparation method comprises: uniformly spreading a transition metal source between two substrates to prepare a sandwich structure; performing a heat treatment on the sandwich structure to fuse and bond the two substrates together, and performing a chemical vapor deposition reaction on a chalcogen element source and the fused and bonded sandwich structure under the protection of a protective gas, wherein the transition metal source is heated to dissolve and diffuse at a reaction temperature, separated out from surfaces of the substrates, and reacts with the chalcogen element source. The prepared thin-layer material is uniformly distributed in a centimeter-level substrate.

RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.

An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.

Provided are powder atomic layer deposition (ALD) equipment capable of increasing deposition uniformity of powder by using a gas supply sequence with or without an impeller or a vibration generator, and a gas supply method thereof, the powder ALD equipment including a process chamber having an accommodation space therein to accommodate powder, a gas supplier for sequentially supplying a plurality of gases to the powder, and a gas exhauster for exhausting, to outside, the gases discharged from the process chamber, wherein the gas supplier includes a gas supply plate, a first gas supply line, a first valve, edge valves, and a gas supply sequence controller.