In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H.sub.2), and nitrogen (N.sub.2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×10.sup.18 atoms/cm.sup.3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.

A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number A.sub.Si of silicon atoms to a sum of the number A.sub.Si of silicon atoms and number A.sub.Ti of titanium atoms in a grain boundary region between the hard grains, {A.sub.Si/(A.sub.Si+A.sub.Ti)}×100, is larger than an average value of percentage of number B.sub.Si of silicon atoms to a sum of the number B.sub.Si of silicon atoms and number B.sub.Ti of titanium atoms in the first layer, {B.sub.Si/(B.sub.Si+B.sub.Ti)}×100.

In a device and a method for depositing at least one layer on at least one substrate, a first gas flow comprising a reactive gas is fed through a first gas inlet opening, and a second gas flow is fed through a second gas inlet opening, into at least one gas distribution volume of a gas inlet element. The inlet element has a gas outlet surface with a multiplicity of gas outlet openings which are fluidically connected to the gas distribution volume and through which the reactive gas enters the process chamber. Products of a physical or chemical reaction of the reactive gas that have entered the process chamber form a layer on the surface of the substrate. The two gas flows are fed into the same gas distribution volume, such that zones with different concentrations of the reactive gas form within the gas distribution volume.

A targeted temporal ALD device includes an ALD head that is configured to perform targeted ALD to discrete targeted areas of products/substrates positioned on the mounting surface(s) of the ALD device. The ALD head includes: (i) an outer housing; (ii) an inner housing positioned within the outer housing; and (ii) a plurality of ports formed into the inner housing and outer housing for connecting at least one precursor gas source and at least one inert gas source to the ALD head. The precursor gases are applied to targeted areas of the products/substrates from an inner chamber in the inner housing, while inert gases are applied to an outer chamber between the inner and outer housings to limit/control application of the precursor gases to a desired target area. Some targeted temporal ALD devices are also configured to position/reposition the ALD head in three orthogonal directions relative to product(s)/mounting surface(s).

Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

A group III nitride substrate manufacturing apparatus including a rotating susceptor for holding and rotating a seed crystal in a reaction container, a heating means for heating the seed crystal, a revolving susceptor for placing thereon and revolving the rotating susceptor, a first gas ejection port for ejecting a gas of a chloride of a group III element at a predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a second gas ejection port for ejecting a nitrogen-containing gas at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a third gas ejection port for ejecting an inert gas from between the first gas ejection port and the second gas ejection port and at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, and an exhaust means for exhausting gas; and a group III nitride substrate manufacturing method performed by using the same.

A film deposition apparatus includes a body formed with openings and cavity, a spray assembly, and a gas assembly. The spray assembly sprays a precursor stream into the cavity for forming a film on a substrate. The gas assembly injects one or more gases into the cavity through the openings to shape the precursor stream and improve directionality and utilization of the precursor stream. The film deposition apparatus can operate with one or more plasma generators to form a laminated film on the substrate. The laminated film may have three layers of film: a first film formed through reaction of a first precursor with plasma, a second film being a composite of the first precursor and a second precursor, and a third film formed through sonification of the second precursor on top of the second film. The second precursor can infiltrate into the first film and fill defects therein.

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

A cutting tool including a rake face, a flank face, and a cutting edge portion, comprising a substrate and an AlTiN layer, the AlTiN layer including cubic Al.sub.xTi.sub.1-xN crystal grains, Al having an atomic ratio x of 0.7 or more and less than 0.95, the AlTiN layer including a central portion, the central portion at the rake face being occupied in area by (200) oriented Al.sub.xTi.sub.1-xN crystal grains at a ratio of 50% or more and less than 80%, the central portion at the cutting edge portion being occupied in area by (200) oriented Al.sub.xTi.sub.1-xN crystal grains at a ratio of 80% or more.