A substrate processing apparatus includes: a processing container; an injector provided inside the processing container and having a shape extending in a longitudinal direction along which a processing gas is supplied; a holder fixed to the injector; a first magnet fixed to the holder and disposed inside the processing container; a second magnet separated from the first magnet by a partition plate and disposed outside the processing container; and a driving part configured to rotate the second magnet, wherein the first magnet and the second magnet are magnetically coupled to each other, and wherein by rotating the second magnet by the driving part, the first magnet magnetically coupled to the second magnet is rotated, and the injector rotates about the longitudinal direction as an axis.

A film forming apparatus according to one aspect of the present disclosure includes a processing chamber, a gas supply pipe extending vertically in the processing chamber and including gas holes, and a boat configured to accommodate substrates including product substrates in a vertical direction in the processing chamber. The film forming apparatus forms a film on each of the substrates by use of gas supplied from the gas holes, each of the substrates corresponding to respective one or more of gas holes. The gas holes that are arranged in a height range in which the product substrates are situated include first gas holes that are opened at a same height, the first gas holes being oriented at respective angles such that respective imaginary lines passing through the first holes and a central axis of the gas supply pipe are at a same angle relative to an imaginary line.

There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.

The manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber, and a raw material gas nozzle. The crystal growth section has a substrate supporting member, and reactive gas nozzles. The gas flow channel includes a first flow channel, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in the reaction container. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.

A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

A semiconductor processing apparatus may include a processing part including a cavity, an insertion part configured to be inserted in the cavity, and a gas inlet coupled to the processing part and configured to supply a gas into the cavity. The insertion part may include a container and a gas ejection pipe facing the container.

A semiconductor manufacturing apparatus includes: a gas introduction pipe connected to a processing container of the semiconductor manufacturing apparatus in order to introduce a gas into the processing container; and a temperature sensor provided in the gas introduction pipe in order to measure a temperature of a gas in the gas introduction pipe.

A method for densifying porous annular substrates by chemical vapor infiltration, includes providing a plurality of unit modules including a support tray on which substrates are stacked, the support tray including a gas intake opening extended by an injection tube disposed in an internal volume formed by the central passages of the stacked substrates, the injection tube including gas injection orifices opening into the internal volume, forming stacks of unit modules in the enclosure of a densification furnace and injecting, into the stacks of unit modules, a gas phase including a gas precursor of a matrix material to be deposited within the porosity of the substrates.

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.