Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.

Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

Various embodiments of the present technology may provide a showerhead assembly that includes a showerhead plate having a plurality of through-holes. Each through-hole has a conical-shaped inlet and a conical-shaped outlet. The showerhead plate may include through-holes in a center region having first dimensions and through-holes in an outer region having second dimensions that are different from the first dimensions.

A processing chamber and port adaptor are provided. Processing chambers include a chamber body having a lid coupled to the first end of the chamber body, a gas ring adjacent the first end of the chamber body, and a substrate support, where a processing region is defined between the substrate support and the lid. The processing chamber includes a port adapter coupled to the second end of the chamber body. The port adapter includes a body defining a plurality of apertures in fluid communication with the processing region, where each of the apertures are spaced apart along the body such that a distance between adjacent apertures is within about 20% of an average aperture spacing distance, an individually controllable valve fluidly coupled to one or more of the plurality of apertures, and an exhaust system in fluid communication with a system foreline and the plurality of apertures.

A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.