A showerhead structure comprises a showerhead including an inner zone, an outer zone, and a partitioning wall therebetween and configured to isolate the inner zone and the outer zone from each other. A first plate is on top of the showerhead and includes a distributor. A plurality of first holes is in the inner zone, and a plurality of second holes is in the outer zone. A plurality of columns in each of the inner zone and the outer zone each extending toward the first plate and having a third hole and a first fluid passage connected to the third hole therein. A space under the showerhead receives a fluid through the first fluid passage and the third hole, the space under the showerhead receives a first gas through the first hole, and the space under the showerhead is configured to receive a second gas through the second hole.

The present disclosure generally relate to a processing chamber comprising a showerhead assembly. The showerhead assembly comprises a showerhead plate having a first side, a gas distribution plate (GDP) having a first side facing a second side of the showerhead plate, the GDP having a first plurality of holes formed therethrough, first ends of the first plurality of holes open to the showerhead plate, and a plurality of discreet adhesive segments each bonding the first side of the GDP to the second side of the showerhead plate, where at least some gaps defined between the discreet adhesive segments are open to second ends of the plurality of holes formed through the GDP. The discreet adhesive segments comprise silicone and one or more of carbon, graphite, and aluminum, have a thermal conductivity of about 0.5 W/mK, and have a resistivity of about 1 -cm to about 3 -cm.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

An MPCVD device capable of realizing effective doping comprises a reaction chamber and a gas input structure, wherein the gas input structure includes a first pipeline and a second pipeline for reaction gas, a first gas distributor connected with the first pipeline that uniformly transports gas as a first reactant into the reaction chamber through a gas outlet of the first pipeline located near the top of the reaction chamber, wherein the second pipeline uniformly inputs a doped reaction gas to a surface of a substrate through a second gas distributor in the form of a gas transport ring having a circular shape, wherein a height in the vertical direction of the gas transport ring connected with the second pipeline is substantially the same as that of a support for the substrate. The gas transport ring can be concentrically placed at a center position inside the support, or concentrically placed outside the support.

A member for a plasma processing apparatus includes a base material and a heat transfer layer provided on one surface of the base material, and the heat transfer layer contains at least one of a fluorine-based resin and a fluorine-based elastomer.

A processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a substrate support having a substrate supporting surface, an energy source coupled to the top or the bottom, and a gas injector liner disposed at the sidewall. The gas injector liner comprises a first plurality of gas outlets disposed at a first height, wherein one or more of the first plurality of gas outlets are oriented upwardly or downwardly, a second plurality of gas outlets disposed at a second height shorter than the first height, wherein one or more of the second plurality of gas outlets are oriented upwardly or downwardly, and a third plurality of gas outlets disposed at a third height shorter than the second height, wherein one or more of the third plurality of gas outlets are oriented upwardly or downwardly with respect to the substrate supporting surface.

A processing chamber and port adaptor are provided. Processing chambers include a chamber body having a lid coupled to the first end of the chamber body, a gas ring adjacent the first end of the chamber body, and a substrate support, where a processing region is defined between the substrate support and the lid. The processing chamber includes a port adapter coupled to the second end of the chamber body. The port adapter includes a body defining a plurality of apertures in fluid communication with the processing region, where each of the apertures are spaced apart along the body such that a distance between adjacent apertures is within about 20% of an average aperture spacing distance, an individually controllable valve fluidly coupled to one or more of the plurality of apertures, and an exhaust system in fluid communication with a system foreline and the plurality of apertures.

A method for processing a substrate includes having a plasma-enhanced chemical vapor deposition (PECVD) chamber including sidewall gas inlets and a top gas inlet disposed on a top plate of the PECVD chamber. The method further includes receiving the substrate on a substrate holder disposed within the PECVD chamber, and flowing a precursor gas mixture into the PECVD chamber through the sidewall gas inlets at a first flow rate and the top gas inlet at a second flow rate. And the method further includes applying a source power to the top plate to form a plasma from the precursor gas mixture, and exposing the substrate to the plasma to deposit a dielectric layer over the substrate, the dielectric layer has an edge thickness at edges of the substrate and a center thickness in a center region of the substrate, the edge thickness is different from the center thickness.

Disclosed in the present disclosure are a gas distributor, a gas delivery apparatus and a thin film processing apparatus. The gas distributor includes a first surface and a second surface arranged opposite to each other, a gas diffusion channel is arranged in the gas distributor, and the gas diffusion channel includes a recessed portion with a bottom surface protruding from the second surface, the recessed portion divides an area below the second surface into an inner area and an outer area, the recessed portion includes a first sidewall surrounding the inner area and a second sidewall surrounding the first sidewall, where the first sidewall comprises first gas channels, and the second sidewall comprises second gas channels, and gases in the gas diffusion channel enter the inner area and the outer area via the first gas channels and the second gas channels, respectively.