The invention relates to a gas injector (10) for supplying gas or a gas mixture to a reaction region (16). The gas injector (10) contains a main part (12) with a gas channel (14). Furthermore, a gas feed (30) is provided for the gas channels (14). The gas or the gas mixture reaches the reaction region (16) from the gas channel (14) via a first opening (26) or a first group (54) of openings (26) in the main part. The main part (12) is equipped with a second opening (27) or a second group (56) of openings (27) via which the gas of the gas mixture likewise reaches the reaction region (16) from the gas channel (14). Each of the openings (26, 27) or the groups (54, 56) of openings (26, 27) is paired with a respective separate gas feed (30, 40) in the main part (12) on the gas channel (14).

Coated semiconductor wafers are produced by introducing a process gas through first gas inlet openings along a first flow direction into a reactor chamber and over a substrate wafer of semiconductor material lying on a susceptor in order to deposit a layer on the substrate wafer, whereby material derived from the process gas precipitates on a preheat ring arranged around the susceptor; extracting the coated substrate wafer from the reactor chamber; and subsequently removing material precipitate from the preheat ring by introducing an etching gas through the first gas inlet openings into the reactor chamber along the first flow direction over the preheat ring and also through second gas inlet openings between which the first gas inlet openings are arranged, along further flow directions which intersect with the first flow direction.

A semiconductor processing device is provided. The device includes a reaction chamber, a first gas inlet mechanism, and a second gas inlet mechanism that includes a gas inlet, a uniform-flow chamber, at least one gas outlet, and at least one switch element. The gas inlet communicates with the uniform-flow chamber and arranged to deliver a process gas into the uniform-flow chamber. The at least one gas outlet is between the reaction chamber and the uniflow-flow chamber. The at least one switch element is disposed in each gas outlet and arranged to enable the uniform-flow chamber to communicate with the reaction chamber when the process gas is being delivered into the uniform-flow chamber through the gas inlet, and to isolate the uniform-flow chamber from the reaction chamber when no process gas is being delivered into the uniform-flow chamber.

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

A substrate processing apparatus unit is disclosed. Exemplary substrate processing apparatus includes a reaction chamber provided with a reaction space; a susceptor disposed in the reaction chamber and configured to support a substrate, wherein the susceptor is configured to be vertically movable between a process position and a transfer position; a shower plate provided above the susceptor and configured to provide the reaction space with a gas; a gas exhaust unit configured to exhaust the gas from the reaction chamber, comprising: an exhaust duct surrounds the shower plate and provided with a main duct; a first flow control ring that surrounds the susceptor with a space when the susceptor is in the process position; and a second flow control ring surrounds the first flow control ring; wherein a first exhaust channel is formed between the exhaust duct and the first flow control ring; wherein a second exhaust channel is formed between the first flow control ring and the second control ring, and the second exhaust channel is fluidly connected to the main duct and an area below the susceptor.

Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a gas distributor around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central opening and a plurality of substrate locations distributed around the central opening, a pumping port below the substrate support, and an energy source coupled to the top or the bottom. The energy source may be a radiant source, a thermal source, a UV source, or a plasma source. The substrate support may be rotated using a magnetic rotator and an air bearing. The gas distributor may have a plurality of passages distributed around a circumference of the gas distributor.

Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.