A modular apparatus for coating glass articles with a chemical compound includes a coating hood section (10a) including a series of interconnected walls (12) defining an interior chamber (18, 20a, 20b) having an inlet (32) and an outlet (44), a blower (24) positioned at least partially in the interior chamber (18, 20a, 20b) to carry air from the inlet (32) towards the outlet (44); and a connector (50) for connecting the coating hood section (10a) to an identical coating hood section (10b). The connector (50) for connecting being defined on at least one of the interconnected walls (12) of the coating hood section (10a).

There is provided technic that includes: a processing chamber having a film formation processing area and a modification processing area adjacent to the film formation processing area; a film former configured to perform film formation processing on a substrate in the film formation processing area; a modifier configured to perform modification processing different from the film formation processing on the substrate in the modification processing area; a substrate mounter configured to support the substrate; and a controller configured to control the substrate mounter such that a speed of moving the substrate is different between the film formation processing area and the modification processing area when the substrate moves in each of the film formation processing area and the modification processing area.

Provided is a gas showerhead with controllable airflow distribution, disposed in a cavity of a thin film deposition device and including: a first-layer panel, having a plurality of first gas supply holes distributed according to a first rule; and a second-layer panel, seated on the first-layer panel and having a plurality of second gas supply holes distributed according to a second rule. The first rule is different from the second rule, and one of the first-layer panel and the second-layer panel is capable of rotating at least by a specific angle relative to the other, so that the two panels have a first position and a second position that are different relative to each other. At the first position, none of the first gas supply holes is covered by the second-layer panel; and at the second position, a portion of the first gas supply holes are aligned with the corresponding second gas supply holes, and the other portion of the first gas supply holes are covered by the second-layer panel. The gas showerhead can adjust the airflow distribution and the airflow rate, which helps to meet the spraying requirements of different thin film deposition processes, and improves the uniformity of a deposited thin film.

Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru.sub.3(CO).sub.12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru.sub.3(CO).sub.12 and the CO gas from the raw material container through the source line; and controlling a pressure in the source line such that the pressure in the source line is a predetermined first pressure or more, and closing the first valve to stop supplying of Ru.sub.3(CO).sub.12 and the CO gas to the chamber.

A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

A modular apparatus for coating glass articles with a chemical compound includes a coating hood section (10a) including a series of interconnected walls (12) defining an interior chamber (18, 20a, 20b) having an inlet (32) and an outlet (44), a blower (24) positioned at least partially in the interior chamber (18, 20a, 20b) to carry air from the inlet (32) towards the outlet (44); and a connector (50) for connecting the coating hood section (10a) to an identical coating hood section (10b). The connector (50) for connecting being defined on at least one of the interconnected walls (12) of the coating hood section (10a).

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

The present disclosure provides a semiconductor manufacturing method and a system therefore. The semiconductor manufacturing method includes: providing a gas from a container through an outlet to a semiconductor wafer manufacturing equipment, wherein a control valve is connected to the outlet to control a gas flow; retrieving a set of parameters corresponding to the gas flow; and determining a nominal position of the control valve by incorporating the set of parameters through a processor in order to provide a desired flow passage into the semiconductor wafer manufacturing equipment, wherein the semiconductor wafer manufacturing equipment includes a plurality of independent reaction chambers, wherein each reaction chamber is individually supplied with a gas pipe, and each gas pipe receives the gas from the container.

An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.