Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.

Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

A modular apparatus for coating glass articles with a chemical compound includes a coating hood section (10a) including a series of interconnected walls (12) defining an interior chamber (18, 20a, 20b) having an inlet (32) and an outlet (44), a blower (24) positioned at least partially in the interior chamber (18, 20a, 20b) to carry air from the inlet (32) towards the outlet (44); and a connector (50) for connecting the coating hood section (10a) to an identical coating hood section (10b). The connector (50) for connecting being defined on at least one of the interconnected walls (12) of the coating hood section (10a).

A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

A method of controlling a position of an adjustable nozzle includes depositing a film on a surface of a wafer. The method includes measuring a thickness profile of the surface of the wafer. The method includes comparing the measurement of the thickness profile with a reference value using a control unit. The method includes transmitting a control signal to the adjustable nozzle to alter the position of the adjustable nozzle based on the result of the comparison. The adjustable nozzle includes a base having a hollow center portion for conducting gas, the base configured for connection to a gas source. The adjust nozzle includes a tip coupled to the base and having an opening for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base in response to the control signal.

A substrate processing apparatus including: a processing container; an injector provided inside the processing container to have a shape extending in a longitudinal direction and configured to supply a processing gas; a holder fixed to the injector; a windmill fixed to the holder; a first driving-gas supply part configured to supply a driving-gas that rotates the windmill in a first direction; a second driving-gas supply part configured to supply the driving-gas that rotates the windmill in a second direction opposite the first direction; and a driving-gas controller configured to control the supply of the driving-gas from the first driving-gas supply part and the second driving-gas supply part. The injector is rotated about the longitudinal direction corresponding to a rotational axis by rotating the windmill through the supply of the driving-gas from at least one of the first and second driving-gas supply parts under the control of the driving-gas controller.