A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

Apparatus and methods for reducing undesirable residue material deposition and buildup on one or more surfaces within a processing chamber are provided herein. In embodiments disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume; a showerhead disposed in the chamber lid and having a bottom surface adjacent the processing volume; and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end contacting the showerhead; a second end opposite the first end; an angled inner wall connected to the first end and extending radially outwardly from the first end towards the second end; and a lower inner wall at a different angle from the angled inner wall. The first end and the angled inner wall of the isolator form a first angle less than 90°.

A baffle for use in a reaction chamber may comprise a baffle first end, a baffle second end, and a baffle space enclosed by a baffle wall system and the reaction chamber floor, wherein the baffle first end may comprise a baffle aperture disposed therethrough configured to allow a fluid to flow from the reaction chamber volume into the baffle space through the baffle aperture and exit the baffle space through a vacuum aperture in the reaction chamber floor toward a vacuum source.

Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

Discussed is a chemical vapor deposition apparatus that includes a reaction chamber with an open top and an open bottom, at least one inner partition wall can be in the reaction chamber and can divide an inner space of the reaction chamber in a height direction to form a plurality of division chambers. A heater can be further disposed at an outer surface of the reaction chamber, a plurality of upper winding rolls can be disposed above the reaction chamber, and at least one roller can be disposed below the reaction chamber.

A plasma processing apparatus includes a chamber having an upper wall with a plurality of through holes and a lower wall with an exhaust hole, the chamber defining a plasma processing space; a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface; a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having gas distribution holes; a gas supply configured to supply gas into the chamber through the through holes; a pumping device having an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall.

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.