Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.

The present document discloses a gas inlet device (21, 21a-21k) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (233), and a side wall (234, 235) extending in a downstream direction (F) from the back wall (233) towards an inlet niche opening (212), an impingement surface (243), a gas orifice (210), which is configured to direct a gas flow towards the impingement surface (243), and a taper surface (244, 245), extending downstream of the impingement surface (243), such that a flow gap (213) having, along the downstream direction (F), gradually increasing cross sectional area, is formed between the side wall (234, 235) and the taper surface (244, 245).

The document further discloses a mixing device, a gas outlet device a reactor and the use of such reactor.

There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber.

Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

In a processing device including a reaction container that receives a gas flowing into the reaction container and performs a predetermined process in a treatment chamber, a member that communicates with an exhaust port at a portion in which a diffusion path of a sidewall or a bottom wall of the reaction container is formed, and an opening that is present between the member having the diffusion path and the reaction container to cause the diffusion path and a space of the treatment chamber to communicate, in order to avoid a shift of the gas in the treatment chamber, an opening area of the opening is made narrower as a position of the opening area is closer to the exhaust port.

Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.

A method and a substrate processing apparatus including a vertical flow reaction chamber, a flow guiding part and a substrate support at a horizontally central area of the reaction chamber, the substrate support residing underneath the flow guiding part, and the flow guiding part forcing the vertical flow from above the flow guiding part to go round the flow guiding part on its downward way towards the substrate support.

A film forming apparatus includes a mounting table on which a substrate is mounted; a ceiling plate facing the mounting table, the ceiling plate defining a processing space between the ceiling plate and mounting table; and a gas supply mechanism configured to supply a source gas to the processing space horizontally with respect to the substrate. A facing surface of the ceiling plate or a facing surface of the mounting table is inclined such that a gap between the facing surfaces of the mounting table and the ceiling plate becomes wider at a downstream side than at an upstream side in a flow direction of the source gas.

Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.