A substrate accommodating unit is disposed adjacent to each of consecutively arranged vacuum transfer units. The substrate accommodating unit includes a hollow housing having, on one sidewall in an arrangement direction of the vacuum transfer units, a loading/unloading port for loading/unloading a substrate into/from the adjacent vacuum transfer unit, a vertically movable partition member disposed in the housing, and a driving mechanism for vertically moving the partition member. When an inner space of the housing is divided horizontally into a first space on a loading/unloading port side and a second space on an opposite side of the loading/unloading port side, the partition member is vertically moved from a state where the first space and the second space communicate with each other to thereby airtightly separate the first space and the second space with the partition member.

There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

The present disclosure relates to a gas injector for injecting a process gas in a process chamber. The gas injector comprises an injector tube comprising a plurality of process gas injection holes spaced apart from one another to deliver the process gas in the process chamber. The gas injector also comprises a feed entry of the injector tube for injecting the process gas into the injector tube and a mixing chamber is provided and is configured to mix a first reactant gas and a second reactant gas, thereby forming the process gas. The mixing chamber is directly connected to the feed entry and has first and second inlets for letting the first and second reactant gas in the mixing chamber. The first and second inlets are facing each other to improve mixing in the mixing chamber of the first and second reactant gas.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

A HFCVD device for continuous preparation of a diamond thin film includes left and right chamber gate valves, left and right thin film growth chambers, left and right chamber water-cooled electrodes, left and right chamber hot filament racks, left and right chamber hot filaments, a sample access chamber, a substrate, a substrate platform, and a substrate trolley. The hot filament is configured in a vertical layout to prevent being bent and deformed during the heating and coating processes. The hot filament is stably kept a distance from the substrate to improve the coating quality and enhance the uniformity of the diamond film. The device is able to continuously use, to reduce filament consumption, to reduce auxiliary times for reinstalling the filament, vacuuming, carbonizing the filament, and filling the vacuum chamber, and to greatly improve the production efficiency of diamond thin film.

A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

A workpiece carrier suitable for high power processes is described. It may include a top plate to support a workpiece, a lift pin to lift a workpiece from a top plate, a lift pin hole through the top plate to contain the lift pin, and a connector to the lift pin hole to connect to a source of gas under pressure to deliver a cooling gas, for example helium, to the back side of the workpiece.

A mask arrangement for masking a substrate in a processing chamber is provided. The mask arrangement includes a mask frame having one or more frame elements and is configured to support a mask device, wherein the mask device is connectable to the mask frame; and at least one actuator connectable to at least one frame element of the one or more frame elements, wherein the at least one actuator is configured to apply a force to the at least one frame element.

Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.