There is provided a method for manufacturing graphene, the method comprising: forming graphene on a non-metallic surface of a substrate by CVD in a CVD reaction chamber, wherein the step of forming graphene comprises introducing a precursor in a gas phase and/or suspended in a gas into the CVD reaction chamber; wherein the precursor consists of one or more compounds selected from a C.sub.4—C.sub.10 organic compound; wherein the organic compound is branched such that the organic compound has at least three methyl groups; and wherein the organic compound consists of carbon and hydrogen and, optionally, oxygen, fluorine, chlorine and/or bromine.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.

A substrate support for a substrate processing chamber includes a baseplate, an edge ring arranged on the baseplate, a seal arrangement located between the edge ring and the baseplate that is configured to define an interface between the edge ring and the baseplate, and at least one channel in fluid communication with the interface and configured to supply a heat transfer gas to the interface.

Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

A workpiece carrier suitable for high power processes is described. It may include a top plate to support a workpiece, a lift pin to lift a workpiece from a top plate, a lift pin hole through the top plate to contain the lift pin, and a connector to the lift pin hole to connect to a source of gas under pressure to deliver a cooling gas, for example helium, to the back side of the workpiece.

A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a holding sheet which holds the substrate and the frame. The plasma processing apparatus includes: a chamber; a stage which is disposed within the chamber and has an upper surface on which the carrier is mounted; a gas hole which is provided at a position of the upper surface opposing a bottom surface of the frame and through which cooling gas is supplied between the stage and the carrier; and a plasma exciting unit which generates plasma within the chamber.